Search Results (4)

Numerous optoelectronic devices based on low-dimensional nanostructures have been developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero- and one-dimensional nanomaterials) have been favored in the field of optoelectronics. In this review, we discuss in detail the structures, preparation methods, band structures, electronic properties, and optoelectronic applications (photocatalysis, photoelectric detection, solar cells, light-emitting diodes, lasers, and optical quantum information processing) of pyramidal low-dimensional semiconductors and demonstrate their excellent photoelectric performances. More specifically, pyramidal semiconductor quantum dots (PSQDs) possess higher mobilities and longer lifetimes, which would be more suitable for photovoltaic devices requiring fast carrier transport. In addition, the linear polarization direction of exciton emission is easily controlled via the direction of magnetic field in PSQDs with C_3v symmetry, so that all-optical multi-qubit gates based on electron spin as a quantum bit could be realized. Therefore, the use of PSQDs (e.g., InAs, GaN, InGaAs, and InGaN) as effective candidates for constructing optical quantum devices is examined due to the growing interest in optical quantum information processing. Pyramidal semiconductor nanorods (PSNRs) and pyramidal semiconductor nanowires (PSNWRs) also exhibit the more efficient separation of electron-hole pairs and strong light absorption effects, which are expected to be widely utilized in light-receiving devices. Finally, this review concludes with a summary of the current problems and suggestions for potential future research directions in the context of pyramidal low-dimensional semiconductors. Full article

We present an innovative method harnessing multistability within a diode-pumped erbium-doped fiber laser to construct logic gates. Our approach involves manipulating the intensity of external noise to regulate the probability of transitioning among four concurrent attractors. In this manner, we facilitate the realization of OR, AND, NOR, and NAND logic operations, aligning with the coexisting period-1, period-3, period-4, and period-5 orbits. Employing detrended fluctuation analysis, we establish equilibrium in the probability distributions of these states. The obtained results denote a substantial advancement in the field of optical logic gate development, representing a pivotal stride toward the seamless integration of an all-optical logic gate within laser oscillator-based systems. Full article

In this paper, we propose the design of an optical system based on two parallel suspended silicon nanowires that support a range of optical resonances that efficiently confine and scatter light in the infrared range as the base of an all-optical displacement sensor. The effects of the variation of the distance between the nanowires are analyzed. The simulation models are designed by COMSOL Multiphysics software, which is based on the finite element method. The diameter of the nanocylinders (d = 140 nm) was previously optimized to achieve resonances at the operating wavelengths (λ = 1064 nm and 1310 nm). The results pointed out that a detectable change in their resonant behavior and optical interaction was achieved. The proposed design aims to use a simple light source using a commercial diode laser and simplify the readout systems with a high sensitivity of 1.1 × 10⁶ V/m² and 1.14 × 10⁶ V/m² at 1064 nm and 1310 nm, respectively. The results may provide an opportunity to investigate alternative designs of displacement sensors from an all-optical approach and explore their potential use. Full article

A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394–5.34 ps and 4.45–115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS₂ tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices. Full article