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Keywords = XBn detector

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14 pages, 8597 KiB  
Article
AI-Based Enhancing of xBn MWIR Thermal Camera Performance at 180 Kelvin
by Michael Zadok, Zeev Zalevsky and Benjamin Milgrom
Sensors 2025, 25(10), 3200; https://doi.org/10.3390/s25103200 - 19 May 2025
Viewed by 512
Abstract
Thermal imaging technology has revolutionized various fields, but current high operating temperature (HOT) mid-wave infrared (MWIR) cameras, particularly those based on xBn detectors, face limitations in size and cost due to the need for cooling to 150 Kelvin. This study explores the potential [...] Read more.
Thermal imaging technology has revolutionized various fields, but current high operating temperature (HOT) mid-wave infrared (MWIR) cameras, particularly those based on xBn detectors, face limitations in size and cost due to the need for cooling to 150 Kelvin. This study explores the potential of extending the operating temperature of these cameras to 180 Kelvin, leveraging advanced AI algorithms to mitigate the increased thermal noise expected at higher temperatures. This research investigates the feasibility and effectiveness of this approach for remote sensing applications, combining experimental data with cutting-edge image enhancement techniques like Enhanced Super-Resolution Generative Adversarial Networks (ESRGAN). The findings demonstrate the potential of 180 Kelvin operation for xBn MWIR cameras, particularly in daylight conditions, paving the way for a new generation of more affordable and compact thermal imaging systems. Full article
(This article belongs to the Section Sensing and Imaging)
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12 pages, 2467 KiB  
Article
Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector
by Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, Nicolas Péré-Laperne and Philippe Christol
Appl. Sci. 2022, 12(20), 10358; https://doi.org/10.3390/app122010358 - 14 Oct 2022
Cited by 10 | Viewed by 2641
Abstract
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed [...] Read more.
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors. Full article
(This article belongs to the Special Issue Design and Study of Type-2 Superlattice Photodetectors)
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12 pages, 2273 KiB  
Article
Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging
by Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne and Philippe Christol
Photonics 2021, 8(6), 194; https://doi.org/10.3390/photonics8060194 - 30 May 2021
Cited by 20 | Viewed by 4301
Abstract
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having [...] Read more.
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong influence of the lateral diffusion length of a shallow-etched pixel on the electro-optical properties of the device. The lowest dark current density was recorded for the deep-etched detector, on the order of 1 × 10−5 A/cm2 at 150 K and a bias operation equal to −400 mV. The corresponding quantum efficiency was measured at 60% (without anti-reflection coating) for a 3 µm thick absorbing layer. A comparison of experimental results obtained on the two kinds of etched pixels demonstrates the need for a deep-etching process combined with efficient passivation for FPA manufacturing. Full article
(This article belongs to the Special Issue Smart Pixels and Imaging)
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