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Keywords = TVS diode

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6 pages, 2735 KiB  
Proceeding Paper
Digital Imaging Inspection System for Aluminum Case Grinding Quality Control of Solid-State Drive
by Chun-Jen Chen and Cheng-Feng Tsai
Eng. Proc. 2025, 92(1), 96; https://doi.org/10.3390/engproc2025092096 - 11 Jun 2025
Viewed by 325
Abstract
The enterprise or data center does not use the M2 SATA because of the cooling problem. Therefore, SSDs employ metal cases similar to the traditional 2.5” or 3.5” hard disk. The metal case is made of aluminum, which must be ground after the [...] Read more.
The enterprise or data center does not use the M2 SATA because of the cooling problem. Therefore, SSDs employ metal cases similar to the traditional 2.5” or 3.5” hard disk. The metal case is made of aluminum, which must be ground after the metal plate forming process. Conventionally, quality control is conducted to check the ground quality of aluminum cases manually. This method is not accurate as the data are difficult to digitize. To improve the quality control, speed, and efficiency. We established a digital imaging-based inspection system for the aluminum case grinding quality control. The inspection system consists of a digital industrial camera, a closed-circuit TV lens, a light-emitting diode (LED) light source, and a personal computer. If the loading and unloading time is ignored, the test time is less than five seconds for one case. When the tested case is uploaded to the inspection system, the camera captures and sends images to the computer. The image was processed to evaluate the quality and record the tested results. Then, the tested case is classified by a robot or an operator. Full article
(This article belongs to the Proceedings of 2024 IEEE 6th Eurasia Conference on IoT, Communication and Engineering)
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20 pages, 4127 KiB  
Article
Reliability Analysis of Transient Voltage Suppression Diodes Under Direct Current Switching Surge Stress
by Daniel van Niekerk and Johan Venter
Energies 2025, 18(7), 1725; https://doi.org/10.3390/en18071725 - 30 Mar 2025
Viewed by 718
Abstract
This study examined the dependability of Transient Voltage Suppression (TVS) diodes under direct current (DC) switching surge stress from several manufacturers with identical electrical requirements. To prevent thermal damage, we applied a standard 3 ms DC switching surge and increased the surge voltage [...] Read more.
This study examined the dependability of Transient Voltage Suppression (TVS) diodes under direct current (DC) switching surge stress from several manufacturers with identical electrical requirements. To prevent thermal damage, we applied a standard 3 ms DC switching surge and increased the surge voltage in increments of 0.1 V with intervals between surges. The breakdown voltage (VBR) was measured after each DC switching surge to verify functionality. To find the maximum surge current and power level that each device could withstand before failing to clamp surge voltage at a defined VBR level, three separate manufacturers’ TVS diode (VBR = 6.8 V) samples were examined. There were significant variations in the computed maximum average surge current and power level between manufacturers’ samples determined by statistical analysis. Prior to failure, the average surge power was 202 W, 321 W, and 357 W, while the maximum average surge current was 29.0 A, 46.9 A, and 51.8 A, respectively. Computed 95% confidence interval ranges between manufacturers of TVS diodes revealed significant population reliability differences under DC switching surge stress. Therefore, an efficient TVS diode reliability metric for DC switching surge stress is the maximum average surge current and power immediately before device failure. Full article
(This article belongs to the Section F3: Power Electronics)
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16 pages, 4933 KiB  
Article
Reliability Analysis and Structural Optimization of Circuit Board Based on Vibration Mode Analysis and Random Vibration
by Jing Tian, Enyu Shi, Jiaxi Zhong, Yushen Chen, Xiaolei Deng and Guohua Li
Processes 2024, 12(8), 1726; https://doi.org/10.3390/pr12081726 - 16 Aug 2024
Cited by 6 | Viewed by 1281
Abstract
As the core component of electronic equipment, vibration load has an important effect on the reliability of circuit boards. However, construction machinery has high requirements for construction efficiency and safety performance, and also has high maintenance costs. In this paper, a vibration reliability [...] Read more.
As the core component of electronic equipment, vibration load has an important effect on the reliability of circuit boards. However, construction machinery has high requirements for construction efficiency and safety performance, and also has high maintenance costs. In this paper, a vibration reliability analysis and structural optimization of the control circuit board of a drilling rig are conducted. First, Failure Mode, Effects and Criticality Analysis (FMECA) and Fault Tree Analysis (FTA) qualitative and quantitative analysis were used to find the weak links in the circuit board. The quantitative and qualitative analysis results of FMECA and FTA show that the critical probability importance values of the chip inductor and TVS diode short circuit are the highest, at 0.249 and 0.173, respectively. They are up to 0.239 higher than those of the other components. Then, according to the analysis results, a precise simplified model is established for the core components, including the weak links, and modal simulations and modal tests are carried out. The key influencing parameters are obtained through comparative analysis and research on natural frequency and frequency response curves. Finally, the position of the stress–strain sensitive source in the real working environment is determined by a dynamic simulation analysis of the random vibration performance of the finite element model. The results can provide an optimization basis for an anti-vibration design of circuit boards. Full article
(This article belongs to the Section AI-Enabled Process Engineering)
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9 pages, 3523 KiB  
Article
A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability
by Zhiyuan He, Yijun Shi, Yun Huang, Yiqiang Chen, Hongyue Wang, Lei Wang, Guoguang Lu and Yajie Xin
Micromachines 2022, 13(2), 299; https://doi.org/10.3390/mi13020299 - 14 Feb 2022
Cited by 4 | Viewed by 2958
Abstract
This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R1A/R1C, in parallel connection between the gate electrodes [...] Read more.
This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R1A/R1C, in parallel connection between the gate electrodes and the neighboring ohmic-contact electrodes (anode/cathode)), and a 2DEG-based proportional amplification resistor (R2, in parallel connection between two gate electrodes). It is demonstrated that the proposed B-TVS-D possesses a symmetrical triggering voltage (Vtrig) and a high secondary breakdown current (Is, over 8 A, corresponding to 12 kV human body model failure voltage) in different directional electrostatic discharge (ESD) events. The proposed diode can effectively enhance the electrostatic discharge robustness for the GaN-based power system. It is also verified that R1A/R1C and R2 have an important impact on Vtrig of the proposed B-TVS-D. Both the decrease in R2 and increase in R1A/R1C can lead to the decrease of Vtrig. In addition, the proposed B-TVS-D can be fabricated on the conventional p-GaN HEMT platform, making the ESD design of the GaN-based power system more convenient. Full article
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18 pages, 5186 KiB  
Review
Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy
by Youngsang Kim, Kyungjin Im and Hyunwook Song
Materials 2022, 15(3), 774; https://doi.org/10.3390/ma15030774 - 20 Jan 2022
Cited by 9 | Viewed by 3058
Abstract
The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been [...] Read more.
The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. However, a full understanding of the crucial factors that affect charge transport through molecular electronic junctions should yet be accomplished. Remarkably, recent advances in transition voltage spectroscopy (TVS) elucidate that it can provide key quantities for probing the transport characteristics of the junctions, including, for example, the position of the frontier molecular orbital energy relative to the electrode Fermi level and the strength of the molecule–electrode interactions. These parameters are known to be highly associated with charge transport behaviors in molecular systems and can then be used in the design of molecule-based devices with rationally tuned electronic properties. This article highlights the fundamental principle of TVS and then demonstrates its major applications to study the charge transport properties of molecular electronic junctions. Full article
(This article belongs to the Special Issue Advances in Molecular Electronics: Materials and Devices)
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16 pages, 3258 KiB  
Article
Reliable Method to Detect Alloy Soldering Fractures under Accelerated Life Test
by M.A. Zamora-Antuñano, O. Mendoza-Herbert, M. Culebro-Pérez, A. Rodríguez-Morales, Juvenal Rodríguez-Reséndiz, J.E.E. Gonzalez-Duran, N. Mendez-Lozano and C.A. Gonzalez-Gutierrez
Appl. Sci. 2019, 9(16), 3208; https://doi.org/10.3390/app9163208 - 7 Aug 2019
Cited by 2 | Viewed by 3617
Abstract
In this research, we investigated the development and design of the Accelerated Life Test (ALT) and its approach to the waste of material. The development of a reliability model is based on the moment at which failure appears. The faults detected in welding [...] Read more.
In this research, we investigated the development and design of the Accelerated Life Test (ALT) and its approach to the waste of material. The development of a reliability model is based on the moment at which failure appears. The faults detected in welding joints during this research prevented proper current flow within electronic components and this interruption of current is considered a critical system failure. Minitab v18 was used to process data. Through statistical analysis, it was determined that the sample size was adequate with a 95% level of significance. A Shapiro Wilk analysis was carried out to determine the normality of the data, where a p-value of 0.1349 was obtained, which indicates that the data are normal. A Weibull analysis was applied, and it was observed that the data adjusted to the regression analysis and Weibull’s reliability distribution. The results showed that failure phenomena can occur during electronic assembly due to the values of R being too high and too close to each other. Significant issues included the welding alloy, temperature, and the interaction between the welding alloy and vibration. It is observed that with high temperature, the number of faults in the solder alloy used for tin and lead and for tin, silver, and copper were lower. 17 electronic assemblies with measures of 2 cm × 2 cm were fabricated, where components such as leads and electric resistance were used. The objective of analyzing this is to obtain the characteristics of the soldering alloy. Electronic components of this type are used worldwide in all types of electronic components, including: TVs, cell phones, tablet, computers, resistors, diodes, LEDs, and capacitors. For this work, the components were built based on an LED and a diode. Full article
(This article belongs to the Special Issue Structural Integrity of Aluminium Alloys)
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