Search Results (6)

AlN-based bulk acoustic wave (BAW) filters have emerged as crucial components in 5G communication due to their high frequency, wide bandwidth, high power capacity, and compact size. This paper mainly reviews the basic principles and recent research advances of AlN-based BAW resonators, which are the backbone of BAW filters. We begin by summarizing the epitaxial growth of single-crystal, polycrystalline, and doped AlN films, with a focus on single-crystal AlN and ScAlN, which are currently the most popular. The discussion then extends to the structure and fabrication of BAW resonators, including the basic solidly mounted resonator (SMR) and the film bulk acoustic resonator (FBAR). The new Xtended Bulk Acoustic Wave (XBAW) technology is highlighted as an effective method to enhance filter bandwidth. Hybrid SAW/BAW resonators (HSBRs) combine the benefits of BAW and SAW resonators to significantly reduce temperature drift. The paper further explores the application of BAW resonators in ladder and lattice BAW filters, highlighting advancements in their design improvements. The frequency-reconfigurable BAW filter, which broadens the filter’s application range, has garnered substantial attention from researchers. Additionally, optimization algorithms for designing AlN-based BAW filters are outlined to reduce design time and improve efficiency. This work aims to serve as a reference for future research on AlN-based BAW filters and to provide insight for similar device studies. Full article

Magnetoelectric (ME) devices combining piezoelectric and magnetostrictive materials have emerged as powerful tools to miniaturize and enhance sensing and communication technologies. This paper examines recent developments in bulk acoustic wave (BAW) and surface acoustic wave (SAW) ME devices, which demonstrate unique capabilities in ultra-sensitive magnetic sensing, compact antennas, and quantum applications. Leveraging the mechanical resonance of BAW and SAW modes, ME sensors achieve the femto- to pico-Tesla sensitivity ideal for biomedical applications, while ME antennas, operating at acoustic resonance, allow significant size reduction, with high radiation gain and efficiency, which is suited for bandwidth-restricted applications. In addition, ME non-reciprocal magnetoacoustic devices using hybrid magnetoacoustic waves present novel solutions for RF isolation, which have also shown potential for the efficient control of quantum defects, such as negatively charged nitrogen-vacancy (NV⁻) centers. Continued advancements in materials and device structures are expected to further enhance ME device performance, positioning them as key components in future bio-sensing, wireless communication, and quantum information technologies. Full article

With the development of communications technology, surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices have become hotspots of the competitive research in the frequency band above GHz. It imposes higher requirements on the operating frequency, temperature coefficient of frequency (TCF), and electromechanical coupling coefficient (k²) of SAW devices. In this work, we reported on a novel ZnO/SiO₂/diamond-layered resonator structure and systematically investigated its propagation characteristics by using finite element methods. A comparative study and analysis of k² and acoustic velocity (v_p) for both the excited Rayleigh mode and the Sezawa mode were conducted. By selecting the appropriate ZnO piezoelectric film, SiO₂, and electrode thickness, the Sezawa mode was chosen as the main mode, effectively improving both k² and v_p. It was observed that the k² of the Sezawa mode is 7.5 times that of the excited Rayleigh mode and nearly 5 times that of piezoelectric single-crystal ZnO; v_p is 1.7 times that of the excited Rayleigh mode and nearly 1.5 times that of piezoelectric single-crystal ZnO. Furthermore, the proposed multilayer structure achieves a TCF close to 0 while maintaining a substantial k². In practical applications, increasing the thickness of SiO₂ can compensate for the device’s TCF reduction caused by the interdigital transducer (IDT). Finally, this study explored the impact of increasing the aperture width and IDT pairs on the performance of the single-port resonator, revealing the changing patterns of quality factor (Q) values. The results reported here show that the structure has great promise for the fabrication of high-frequency and low-TCF SAW devices. Full article

The past few decades have witnessed the ultra-fast development of wireless telecommunication systems, such as mobile communication, global positioning, and data transmission systems. In these applications, radio frequency (RF) acoustic devices, such as bulk acoustic waves (BAW) and surface acoustic waves (SAW) devices, play an important role. As the integration technology of BAW and SAW devices is becoming more mature day by day, their application in the physical and biochemical sensing and actuating fields has also gradually expanded. This has led to a profusion of associated literature, and this article particularly aims to help young professionals and students obtain a comprehensive overview of such acoustic technologies. In this perspective, we report and discuss the key basic principles of SAW and BAW devices and their typical geometries and electrical characterization methodology. Regarding BAW devices, we give particular attention to film bulk acoustic resonators (FBARs), due to their advantages in terms of high frequency operation and integrability. Examples illustrating their application as RF filters, physical sensors and actuators, and biochemical sensors are presented. We then discuss recent promising studies that pave the way for the exploitation of these elastic wave devices for new applications that fit into current challenges, especially in quantum acoustics (single-electron probe/control and coherent coupling between magnons and phonons) or in other fields. Full article

MEMS/NEMS resonators are widely studied in biological detection, physical sensing, and quantum coupling. This paper reviews the latest research progress of MEMS/NEMS resonators with different structures. The resonance performance, new test method, and manufacturing process of single or double-clamped resonators, and their applications in mass sensing, micromechanical thermal analysis, quantum detection, and oscillators are introduced in detail. The material properties, resonance mode, and application in different fields such as gyroscope of the hemispherical structure, microdisk structure, drum resonator are reviewed. Furthermore, the working principles and sensing methods of the surface acoustic wave and bulk acoustic wave resonators and their new applications such as humidity sensing and fast spin control are discussed. The structure and resonance performance of tuning forks are summarized. This article aims to classify resonators according to different structures and summarize the working principles, resonance performance, and applications. Full article

With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators. Full article