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Keywords = QDs/microdisk system

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9 pages, 3301 KB  
Article
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate
by Wenqian Liang, Wenqi Wei, Dong Han, Ming Ming, Jieyin Zhang, Zihao Wang, Xinding Zhang, Ting Wang and Jianjun Zhang
Materials 2024, 17(8), 1916; https://doi.org/10.3390/ma17081916 - 21 Apr 2024
Cited by 3 | Viewed by 2285
Abstract
The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and [...] Read more.
The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters. Full article
(This article belongs to the Special Issue III-V Semiconductor Optoelectronics: Materials and Devices)
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10 pages, 3949 KB  
Article
Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System
by Jia Yan, Zhifang Zhang, Ningning Zhang, Qiang Huang, Yan Zhan, Zuimin Jiang and Zhenyang Zhong
Nanomaterials 2023, 13(16), 2323; https://doi.org/10.3390/nano13162323 - 12 Aug 2023
Cited by 3 | Viewed by 1922
Abstract
Semiconductor quantum dots (QDs)/microdisks promise a unique system for comprehensive studies on cavity quantum electrodynamics and great potential for on-chip integrated light sources. Here, we report on a strategy for precisely site-controlled Ge QDs in SiGe microdisks via self-assembly growth of QDs on [...] Read more.
Semiconductor quantum dots (QDs)/microdisks promise a unique system for comprehensive studies on cavity quantum electrodynamics and great potential for on-chip integrated light sources. Here, we report on a strategy for precisely site-controlled Ge QDs in SiGe microdisks via self-assembly growth of QDs on a micropillar with deterministic pits and subsequent etching. The competitive growth of QDs in pits and at the periphery of the micropillar is disclosed. By adjusting the growth temperature and Ge deposition, as well as the pit profiles, QDs can exclusively grow in pits that are exactly located at the field antinodes of the corresponding cavity mode of the microdisk. The inherent mechanism of the mandatory addressability of QDs is revealed in terms of growth kinetics based on the non-uniform surface chemical potential around the top of the micropillar with pits. Our results demonstrate a promising approach to scalable and deterministic QDs/microdisks with strong light–matter interaction desired for fundamental research and technological applications. Full article
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