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Keywords = Pd-Ni alloy thin-film

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11 pages, 2170 KiB  
Review
Local Structure and Dynamics of Functional Materials Studied by X-ray Absorption Fine Structure
by Takafumi Miyanaga
Symmetry 2021, 13(8), 1315; https://doi.org/10.3390/sym13081315 - 22 Jul 2021
Cited by 6 | Viewed by 2479
Abstract
X-ray absorption fine structure (XAFS) is a powerful technique used to analyze a local electronic structure, local atomic structure, and structural dynamics. In this review, I present examples of XAFS that apply to the local structure and dynamics of functional materials: (1) structure [...] Read more.
X-ray absorption fine structure (XAFS) is a powerful technique used to analyze a local electronic structure, local atomic structure, and structural dynamics. In this review, I present examples of XAFS that apply to the local structure and dynamics of functional materials: (1) structure phase transition in perovskite PbTiO3 and magnetic FeRhPd alloys; (2) nano-scaled fluctuations related to their magnetic properties in Ni–Mn alloys and Fe/Cr thin films; and (3) the Debye–Waller factors related to the chemical reactivity for catalysis in polyanions and ligand exchange reaction. This study shows that the local structure and dynamics are related to the characteristic function of the materials. Full article
(This article belongs to the Special Issue X-ray Absorption Fine Structure and Symmetry)
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33 pages, 12251 KiB  
Review
Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces
by Miłosz Grodzicki
Coatings 2021, 11(2), 145; https://doi.org/10.3390/coatings11020145 - 28 Jan 2021
Cited by 18 | Viewed by 4029
Abstract
In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, [...] Read more.
In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001). Full article
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9 pages, 3278 KiB  
Article
Development of a High Stability Pd-Ni Alloy Thin-Film Coated SAW Device for Sensing Hydrogen
by Wen Wang, Xueli Liu, Shengchao Mei, Mengwei Liu, Chao Lu and Minghui Lu
Sensors 2019, 19(16), 3560; https://doi.org/10.3390/s19163560 - 15 Aug 2019
Cited by 19 | Viewed by 3634
Abstract
A Pd-Ni alloy thin-film coated surface acoustic wave (SAW) device is proposed for sensing hydrogen. The Pd-Ni thin-film was sputtered onto the SAW propagation path of a SAW device with a delay line pattern to build the chip-sized hydrogen sensor. The prepared sensor [...] Read more.
A Pd-Ni alloy thin-film coated surface acoustic wave (SAW) device is proposed for sensing hydrogen. The Pd-Ni thin-film was sputtered onto the SAW propagation path of a SAW device with a delay line pattern to build the chip-sized hydrogen sensor. The prepared sensor chip was characterized by employing a differential oscillation loop. The effect of the Pd-Ni film thickness on sensing performance was also evaluated, and optimal parameters were determined, allowing for fast response and high sensitivity. Excellent working stability (detection error of 3.7% in half a year), high sensitivity (21.3 kHz/%), and fast response (less than 10 s) were achieved from the 40 nm Pd-Ni alloy thin-film coated sensing device. Full article
(This article belongs to the Section Physical Sensors)
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9 pages, 4298 KiB  
Article
Integrated Temperature and Hydrogen Sensors with MEMS Technology
by Hongchuan Jiang, Min Huang, Yibing Yu, Xiaoyu Tian, Xiaohui Zhao, Wanli Zhang, Jianfeng Zhang, Yifan Huang and Kun Yu
Sensors 2018, 18(1), 94; https://doi.org/10.3390/s18010094 - 31 Dec 2017
Cited by 74 | Viewed by 7754
Abstract
In this work, a PdNi thin film hydrogen gas sensor with integrated Pt thin film temperature sensor was designed and fabricated using the micro-electro-mechanical system (MEMS) process. The integrated sensors consist of two resistors: the former, based on Pt film, is used as [...] Read more.
In this work, a PdNi thin film hydrogen gas sensor with integrated Pt thin film temperature sensor was designed and fabricated using the micro-electro-mechanical system (MEMS) process. The integrated sensors consist of two resistors: the former, based on Pt film, is used as a temperature sensor, while the latter had the function of hydrogen sensing and is based on PdNi alloy film. The temperature coefficient of resistance (TCR) in both devices was measured and the output response of the PdNi film hydrogen sensor was calibrated based on the temperature acquired by the Pt temperature sensor. The SiN layer was deposited on top of Pt film to inhibit the hydrogen diffusion and reduce consequent disturbance on temperature measurement. The TCR of the PdNi film and the Pt film was about 0.00122/K and 0.00217/K, respectively. The performances of the PdNi film hydrogen sensor were investigated with hydrogen concentrations from 0.3% to 3% on different temperatures from 294.7 to 302.2 K. With the measured temperature of the Pt resistor and the TCR of the PdNi film, the impact of the temperature on the performances of the PdNi film hydrogen sensor was reduced. The output response, response time and recovery time of the PdNi film hydrogen sensors under the hydrogen concentration of 0.5%, 1.0%, 1.5% and 2.0% were measured at 313 K. The output response of the PdNi thin film hydrogen sensors increased with increasing hydrogen concentration while the response time and recovery time decreased. A cycling test between pure nitrogen and 3% hydrogen concentration was performed at 313 K and PdNi thin film hydrogen sensor demonstrated great repeatability in the cycling test. Full article
(This article belongs to the Special Issue Integrated Sensors)
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