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Search Results (3)

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Keywords = Nd-IZO

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16 pages, 5468 KiB  
Article
Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes
by Xinyi Zhang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Zimian Lin, Tian Qiu, Zhao Yang, Xuan Zeng, Rihui Yao and Junbiao Peng
Membranes 2021, 11(5), 337; https://doi.org/10.3390/membranes11050337 - 30 Apr 2021
Cited by 6 | Viewed by 4020
Abstract
High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer [...] Read more.
High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer of TFT with Cu source and drain (S/D) electrodes. Under the guidance of the Taguchi orthogonal design method from Minitab software, the semiconductor characteristics were evaluated by microwave photoconductivity decay (μ-PCD) measurement. The results show that moderate oxygen concentration (~5%), low sputtering pressure (≤5 mTorr) and annealing temperature (≤300 °C) are conducive to reducing the shallow localized states of NdIZO film. The optimized annealing temperature of this device configuration is as low as 250 °C, and the contact resistance (RC) is modulated by gate voltage (VG) instead of a constant value when annealed at 300 °C. It is believed that the adjustable RC with VG is the key to keeping both high mobility and compensation of the threshold voltage (Vth). The optimal device performance was obtained at 250 °C with an Ion/Ioff ratio of 2.89 × 107, a saturation mobility (μsat) of 24.48 cm2/(V·s) and Vth of 2.32 V. Full article
(This article belongs to the Special Issue Composite Conducting Membranes: Preparation, Properties, and Applications)
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7 pages, 4474 KiB  
Article
All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors
by Jianqiu Chen, Xiuqi Huang, Qunjie Li, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Hongfu Liang, Yicong Zhou, Rihui Yao and Junbiao Peng
Appl. Sci. 2019, 9(1), 83; https://doi.org/10.3390/app9010083 - 26 Dec 2018
Cited by 3 | Viewed by 3285
Abstract
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C [...] Read more.
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays. Full article
(This article belongs to the Special Issue Oxide Thin Film Transistors)
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9 pages, 3317 KiB  
Article
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature
by Rihui Yao, Xiaoqing Li, Zeke Zheng, Xiaochen Zhang, Mei Xiong, Song Xiao, Honglong Ning, Xiaofeng Wang, Yuxiang Wu and Junbiao Peng
Materials 2018, 11(10), 1871; https://doi.org/10.3390/ma11101871 - 1 Oct 2018
Cited by 4 | Viewed by 4150
Abstract
In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and [...] Read more.
In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach. Full article
(This article belongs to the Special Issue Functional Amorphous Materials)
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