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Authors = Wanling Deng

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9 pages, 1661 KiB  
Article
Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
by Yuan Liu, Weijie Ye, Xiaoming Xiong and Wanling Deng
Electronics 2022, 11(19), 3050; https://doi.org/10.3390/electronics11193050 - 25 Sep 2022
Cited by 1 | Viewed by 2317
Abstract
4H-silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs) show 1/f low-frequency noise behavior. In this paper, this can be explained by the combination of the mobility fluctuation (Δμ) and the carrier number fluctuation (ΔN) theories. The Δμ theory [...] Read more.
4H-silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs) show 1/f low-frequency noise behavior. In this paper, this can be explained by the combination of the mobility fluctuation (Δμ) and the carrier number fluctuation (ΔN) theories. The Δμ theory believes that LFN is generated by the bulk defects, while the ΔN theory holds that LFN originates from the extraordinarily high oxide traps. For 4H-SiC MOSFETs, significant subthreshold noise will appear when only the ΔN theory attempts to model LFN in the subthreshold region. Therefore, we account for the high density of bulk defects (Δμ theory) and characterize the subthreshold noise. The theoretical model allows us to determine the bulk density of the trap states. The proposed LFN model is applicable to SiC MOSFETs and accurately describes the noise experimental data over a wide range of operation regions. Full article
(This article belongs to the Special Issue Advanced CMOS Devices)
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13 pages, 5355 KiB  
Article
An Analytical Algorithm for Extracting Model Parameters in a Lumped-Parameter Equivalent Circuit of Solar Cells
by Yunhan Ma, Jingxian Liu, Junkai Huang and Wanling Deng
Energies 2022, 15(6), 2221; https://doi.org/10.3390/en15062221 - 18 Mar 2022
Viewed by 1654
Abstract
An analytical algorithm is proposed to extract model parameters in a single-diode lumped-parameter equivalent circuit of solar cells. In the calculation process, six relevant factors in the datasheet are necessary to establish a set of transcendental equations. This set of equations is analyzed [...] Read more.
An analytical algorithm is proposed to extract model parameters in a single-diode lumped-parameter equivalent circuit of solar cells. In the calculation process, six relevant factors in the datasheet are necessary to establish a set of transcendental equations. This set of equations is analyzed and solved to acquire accurate values for the model parameters, by retaining equation items with important physical significance. Furthermore, based on simulations and reconstruction experiments, verifications show the accuracy and universality of the algorithm. Therefore, the proposed algorithm can be regarded as a valid solution for estimating the model parameters of a single-diode lumped-parameter circuit of solar cells. Full article
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12 pages, 5806 KiB  
Article
A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs
by Chuanzhong Xu, Fei Yu, Gongyi Huang, Wanling Deng, Xiaoyu Ma and Junkai Huang
Electronics 2019, 8(7), 785; https://doi.org/10.3390/electronics8070785 - 14 Jul 2019
Cited by 1 | Viewed by 3625
Abstract
A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated [...] Read more.
A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10−7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations. Full article
(This article belongs to the Section Semiconductor Devices)
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