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Authors = Klaus-J. Boller ORCID = 0000-0001-6628-610X

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16 pages, 5381 KiB  
Article
Absorber-Free Mode-Locking of a Hybrid Integrated Diode Laser at Sub-GHz Repetition Rate
by Anzal Memon, Albert van Rees, Jesse Mak, Youwen Fan, Peter J. M. van der Slot, Hubertus M. J. Bastiaens and Klaus-Jochen Boller
Photonics 2024, 11(11), 1002; https://doi.org/10.3390/photonics11111002 - 24 Oct 2024
Cited by 1 | Viewed by 1743
Abstract
We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates, using a hybrid integrated extended cavity diode laser operating near 1550 nm. The laser is based on InP as a gain medium and a Si3N4 waveguide feedback circuit. Absorber-free [...] Read more.
We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates, using a hybrid integrated extended cavity diode laser operating near 1550 nm. The laser is based on InP as a gain medium and a Si3N4 waveguide feedback circuit. Absorber-free Fourier domain mode-locking with ≈15 comb lines at around 0.2 mW total power is achieved with repetition rates around 500 MHz, using three highly frequency-selective micro-ring resonators that extend the on-chip cavity length to 0.6 m. To stabilize the repetition rate, hybrid mode-locking is demonstrated by weak RF modulation of the diode current. The RF injection reduces the Lorentzian linewidth component from 8.9 kHz to a detection-limited value of around 300 mHz. To measure the locking range of the repetition rate, the injected RF frequency is tuned with regard to the passive mode-locking frequency and the injected RF power is varied. The locking range increases approximately as a square-root function of the injected RF power. At 1 mW injection, a wide locking range of about 80 MHz is obtained. We also observe the laser maintaining stable mode-locking when the DC diode pump current is increased from 40 mA to 190 mA, provided that the cavity length is maintained constant with thermo-refractive tuning. Full article
(This article belongs to the Section Lasers, Light Sources and Sensors)
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33 pages, 11871 KiB  
Review
Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits
by Klaus-J. Boller, Albert van Rees, Youwen Fan, Jesse Mak, Rob E. M. Lammerink, Cornelis A. A. Franken, Peter J. M. van der Slot, David A. I. Marpaung, Carsten Fallnich, Jörn P. Epping, Ruud M. Oldenbeuving, Dimitri Geskus, Ronald Dekker, Ilka Visscher, Robert Grootjans, Chris G. H. Roeloffzen, Marcel Hoekman, Edwin J. Klein, Arne Leinse and René G. Heideman
Photonics 2020, 7(1), 4; https://doi.org/10.3390/photonics7010004 - 21 Dec 2019
Cited by 116 | Viewed by 20563
Abstract
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback [...] Read more.
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si 3 N 4 in SiO 2 ) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μ m wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser. Full article
(This article belongs to the Special Issue Semiconductor Laser Dynamics: Fundamentals and Applications)
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