Sign in to use this feature.

Years

Between: -

Subjects

Journals

Article Types

Countries / Regions

Search Results (2)

Search Parameters:
Authors = Denis P. Masson

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
12 pages, 1828 KiB  
Communication
74.7% Efficient GaAs-Based Laser Power Converters at 808 nm at 150 K
by Simon Fafard and Denis P. Masson
Photonics 2022, 9(8), 579; https://doi.org/10.3390/photonics9080579 - 17 Aug 2022
Cited by 39 | Viewed by 7624
Abstract
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented [...] Read more.
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% are measured at temperatures around 150 K. At temperatures around 77 K, a remarkably low bandgap offset value of Woc = 71 mV is obtained at an optical input intensity of ~7 W/cm2. At 77 K, the PT5 retains an efficiency of 65% with up to 0.3 W of converted output power. Full article
Show Figures

Figure 1

11 pages, 4314 KiB  
Communication
High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm
by Simon Fafard and Denis P. Masson
Photonics 2022, 9(7), 438; https://doi.org/10.3390/photonics9070438 - 21 Jun 2022
Cited by 39 | Viewed by 8340
Abstract
The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected [...] Read more.
The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4–5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of ~49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 °C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results. Full article
Show Figures

Figure 1

Back to TopTop