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Authors = Agata Sabik ORCID = 0000-0002-6952-0384

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8 pages, 2023 KiB  
Article
Interactions between PTCDI-C8 and Si(100) Surface
by Katarzyna Lament, Miłosz Grodzicki, Piotr Mazur, Agata Sabik, Rafał Lewandków and Antoni Ciszewski
Crystals 2023, 13(3), 441; https://doi.org/10.3390/cryst13030441 - 3 Mar 2023
Cited by 1 | Viewed by 2656
Abstract
PTCDI-C8 molecules are vapor-deposited onto reconstructed Si(100)—(2 × 1) surface under ultra-high vacuum. X-ray photoelectron spectra reveal a bond formation between oxygen atoms of the molecules’ carboxylic groups and Si dangling bonds of the substrate. Following PTCDI—C8 film growth, ultraviolet photoelectron spectra show [...] Read more.
PTCDI-C8 molecules are vapor-deposited onto reconstructed Si(100)—(2 × 1) surface under ultra-high vacuum. X-ray photoelectron spectra reveal a bond formation between oxygen atoms of the molecules’ carboxylic groups and Si dangling bonds of the substrate. Following PTCDI—C8 film growth, ultraviolet photoelectron spectra show a drop in the HOMO level with respect to the Fermi level from 1.8 eV to 2.0 eV and a monotonic work function increase from 2.5 eV up to 3.3 eV. For a film thickness of 6.0 nm, a difference of 1.5 eV between the HOMO level of the film and the valence band maximum of the substrate is accomplished. Full article
(This article belongs to the Special Issue Optoelectronics of Thin Films and Nanoparticles)
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7 pages, 1711 KiB  
Article
Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique
by Piotr Mazur, Agata Sabik, Rafał Lewandków, Artur Trembułowicz and Miłosz Grodzicki
Crystals 2022, 12(12), 1847; https://doi.org/10.3390/cryst12121847 - 18 Dec 2022
Cited by 3 | Viewed by 3484
Abstract
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample [...] Read more.
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample annealing at 1123 K. A thermally induced decomposition of GaN and interfacial mixing phenomena lead to the formation of a niobium nitride compound, which contains Nb from thin film and N atoms from the substrate. The processes allowed the obtaining of ordered NbNx films on GaN. Structural and chemical properties of both the GaN substrate and NbNx films were studied in-situ by surface-sensitive techniques, i.e., X-ray and UV photoelectron spectroscopies (XPS/UPS) and a low-energy electron diffraction (LEED). Then, the NbNx/GaN surface morphology was investigated ex-situ by scanning tunneling microscopy (STM). Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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9 pages, 2963 KiB  
Article
Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
by Rafał Lewandków, Piotr Mazur, Artur Trembułowicz, Agata Sabik, Radosław Wasielewski and Miłosz Grodzicki
Materials 2021, 14(15), 4189; https://doi.org/10.3390/ma14154189 - 27 Jul 2021
Cited by 11 | Viewed by 2692
Abstract
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the [...] Read more.
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001). Full article
(This article belongs to the Special Issue The Future of Interfaces—a Step Further towards a Complete Understanding of Surfaces)
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10 pages, 4256 KiB  
Article
Au(100) as a Template for Pentacene Monolayer
by Artur Trembułowicz, Agata Sabik and Miłosz Grodzicki
Molecules 2021, 26(8), 2393; https://doi.org/10.3390/molecules26082393 - 20 Apr 2021
Cited by 5 | Viewed by 3718
Abstract
The surface of quasi-hexagonal reconstructed Au(100) is used as the template for monolayer pentacene (PEN) self-assembly. The system is characterized by means of scanning tunneling microscopy at room temperature and under an ultra-high vacuum. A new modulated pattern of molecules with long molecular [...] Read more.
The surface of quasi-hexagonal reconstructed Au(100) is used as the template for monolayer pentacene (PEN) self-assembly. The system is characterized by means of scanning tunneling microscopy at room temperature and under an ultra-high vacuum. A new modulated pattern of molecules with long molecular axes (MA) arranged along hex stripes is found. The characteristic features of the hex reconstruction are preserved herein. The assembly with MA across the hex rows leads to an unmodulated structure, where the molecular layer does not recreate the buckled hex phase. The presence of the molecules partly lifts the reconstruction—i.e., the gold hex phase is transformed into a (1×1) phase. The arrangement of PEN on the gold (1×1) structure is the same as that of the surrounding molecular domain on the reconstructed surface. The apparent height difference between phases allows for the distinction of the state of the underlying gold surface. Full article
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