Recent Advances in Flexible Resistive Random Access Memory
Abstract
:1. Introduction
2. Basic Working Principle of Flexible RRAM
2.1. Structure of Flexible RRAM
2.2. Resistance Transition Mechanism of Flexible RRAM
2.3. Failure Mechanism of Flexible RRAM
3. Material System of Flexible Resistive Memory
3.1. Flexible Dielectric Materials
3.1.1. Flexible Inorganic Materials
3.1.2. Flexible Organic Materials
3.1.3. Flexible Organic-Inorganic Composite Materials
3.1.4. Further Discussion of the Material Systems
3.2. Flexible Electrode Materials
3.2.1. Flexible Metal Electrode
3.2.2. Conductive Oxide Electrode and Carbon/Nitrogen Electrode
3.2.3. Other Flexible Electrode Materials
3.3. Flexible Substrate Materials
3.3.1. Flexible Polymer Substrate
3.3.2. Flexible Metal Substrates and Other Flexible Substrates
3.4. Summary of the Material System
3.5. Flexibility of RRAM
4. Fabrication Process of Flexible RRAM
5. Conclusions and Challenges
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Dielectric Materials | Polarity | ON/OFF Ratio | Durability | Retention Time | Number of Bending Cycles | Bending Radius |
---|---|---|---|---|---|---|
TiO2 [21] | bipolar | 103 | 102 | 2 × 103 s | 40 | 9 mm |
NiOx [22,23] | bipolar | 106 | 102 | 104 s | 120 | 10 mm |
ZnOx [24] | bipolar | 106 | 102 | 104 s | 98 | 20 mm |
AlOx [25,26] | bipolar | 106 | 30 | 3 × 104 s | 100 | 10 mm |
WOx [28,29] | bipolar | 105 | 2 × 103 | 105 s | 100 | 15 mm |
HfOx [30,31] | bipolar | 1.2 × 103 | 5 × 108 | 104 s | 103 | 5 mm |
MoOx [32,33] | unipolar | 2.38 × 105 | 50 | 2 × 105 s | 100 | 10 mm |
Organic Materials | ON/OFF Ratio | Durability/Times | Retention Time | Number of Bending Cycles | Bending Radius |
---|---|---|---|---|---|
chitosan [53] | 102 | 102 | 104 s | 103 | 5 mm |
lignin [54] | 103 | 102 | 103 s | 102 | 15 mm |
polyparaxylene [55] | 104 | 5 × 102 | 2 × 105 s | 5 × 102 | 10 mm |
PI [56] | 106 | 103 | 4 × 103 s | 103 | 5 mm |
pEGDMA [57] | 102 | 5 × 102 | 106 s | 103 | 4 mm |
pV3D3 [58] | 107 | 105 | 105 s | 103 | 3.8 mm |
starch [59] | 103 | 102 | 104 s | 103 | 5 mm |
NC [60] | 103 | 102 | 104 s | 5 × 102 | 10 mm |
CPR1 [61] | 108 | 103 | 3 × 107 s | 103 | 3 mm |
P3HT:OD [62] | 5 × 102 | 102 | 104 s | 25 | 50 mm |
PMMA:P3HT [63] | 105 | 80 | 8 × 103 s | N/R | 10 mm |
PMMA:PCBM [64,65] | 103 | 105 | 1.2 × 104 s | 104 | 10 mm |
PI:PCBM [66] | 104 | 2 × 102 | 104 s | 102 | 10 mm |
PS:PCBM [67] | 104 | 43 | 103 s | N/R | 4 mm |
PAA:PEI [68] | 50 | 2 × 104 | 104 s | 104 | 2 mm |
Rh B:R 6G [69] | 103 | WORM | 5 × 103 s | 103 | 8.8 mm |
Features | PET [118,119,120] | PEN [121,122,123,124] | PI [120,125] | PC [126,127,128] | PES [129,130] |
---|---|---|---|---|---|
tensile strength (flexibility, MPa) | 742 | 708 | 144 | 60 | 44 |
Young’s modulus (elasticity, GPa) | 2.8 | 9.0 | 2.5 | 2.5 | 0.64 |
temperature of glass transition (°C) | 84 | 129 | 320 | 150 | 220 |
melting temperature (°C) | 255~265 | 260 | 590 | 220~230 | 330 |
thermal conductivity (W/m·K) | 0.3 | 0.164 | 0.8 | 0.2 | 0.17 |
coefficient of thermal expansion (ppm/°C) | 60 | 18.45 | 15 | 50 | 65 |
transmittance | 90.4% | 88.18% | 60% | 90% | 89% |
corrosion resistance | good | good | good | poor | good |
dimensional stability | good | good | fair | fair | good |
Methods | Advantages | Disadvantages |
---|---|---|
CVD [137,138] | Pure film and good density and uniformity | High temperature of reaction, difficulty in mass production and toxic byproducts |
PVD [22,139] | Low temperature of reaction and high degree of process automation | Poor uniformity and difficulty in mass production |
MBE [140,141] | Pure film, grows at low temperatures and has atomic interfaces | High cost and difficulty in mass production |
spin coatings [142] | Uniform film thickness | Mass solution loss |
spraying [143] | No solution loss and quick film forming | Difficulties in process optimization of solvent mixing and solution adjustment |
casting [144] | High degree of crystallinity | Poor uniformity and long molding cycle |
screen printing [145] | Simple manufacturing process and wide range of application | The large thickness is not conducive to miniaturization |
inkjet printing [15,146] | Automatic control, small material loss, rapid production of multilayer structure and no selectivity for substrates | High requirements for ink conditions and droplets coalesce easily |
nano imprinting [147] | Composition of tens of nanometers can be achieved under normal temperature and pressure | Immature technology and expensive equipment |
dipping [142] | Large area of film forming | Large thickness relatively and inability to perform fine manipulation |
LB [148] | Single-layer controlled production and nanoscale accuracy | Corresponding materials are limited and poor mechanical properties |
self-assembly [88] | Highly oriented monolayer and quick film forming | High requirements of process and strict conditions of preparation |
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Tang, P.; Chen, J.; Qiu, T.; Ning, H.; Fu, X.; Li, M.; Xu, Z.; Luo, D.; Yao, R.; Peng, J. Recent Advances in Flexible Resistive Random Access Memory. Appl. Syst. Innov. 2022, 5, 91. https://doi.org/10.3390/asi5050091
Tang P, Chen J, Qiu T, Ning H, Fu X, Li M, Xu Z, Luo D, Yao R, Peng J. Recent Advances in Flexible Resistive Random Access Memory. Applied System Innovation. 2022; 5(5):91. https://doi.org/10.3390/asi5050091
Chicago/Turabian StyleTang, Peng, Junlong Chen, Tian Qiu, Honglong Ning, Xiao Fu, Muyun Li, Zuohui Xu, Dongxiang Luo, Rihui Yao, and Junbiao Peng. 2022. "Recent Advances in Flexible Resistive Random Access Memory" Applied System Innovation 5, no. 5: 91. https://doi.org/10.3390/asi5050091