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Proceedings 2017, 1(4), 295;

Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process)

Robert Bosch GmbH, Reutlingen D-72762, Germany
Department of Electrical Engineering and Information Technology and Fraunhofer Institute for Electronic Nano Systems ENAS Chemnitz, Technical University Chemnitz-Zwickau, Chemnitz D-09107, Germany
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 11 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [1056 KB, uploaded 23 November 2017]


The EPyC process uses silicon sacrificial layer technology, which makes it possible to generate high volume sacrificial structures of up to 100 microns thickness. The biggest challenge is the rapid and complete removal of the 3D sacrificial structure at the end of the process. This paper examines and compares in detail two silicon dry etching methods to optimize a new silicon etching process for successful EPyC manufacturing
Keywords: 3D MEMS; EPyC process; silicon sacrificial layer technology 3D MEMS; EPyC process; silicon sacrificial layer technology
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Louriki, L.; Staffeld, P.; Kaelberer, A.; Otto, T. Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process). Proceedings 2017, 1, 295.

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