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Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

1
Department of ECE, CVR College of Engineering, Rangareddy 501510, India
2
Department of Sensors & Biomedical Technology, School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Vellore 632014, India
3
School of MS, University of Hyderabad, Hyderabad 500032, India
4
School of Electronics Engineering (SENSE), Vellore Institute of Technology Chennai Campus, Chennai 600127, India
*
Author to whom correspondence should be addressed.
Condens. Matter 2021, 6(2), 21; https://doi.org/10.3390/condmat6020021
Received: 14 March 2021 / Revised: 7 June 2021 / Accepted: 10 June 2021 / Published: 11 June 2021
(This article belongs to the Section Surface and Interfaces)
We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses-irradiated NiOx/SiO2 TFT exhibited an enhanced mobility of 3 cm2/V-s from a value of 1.25 cm2/V-s for as-deposited NiOx/SiO2 TFT, subthreshold swing of 0.65 V/decade, on/off current ratio of 6.5 × 104 and threshold voltage of −12.2 V. The concentration of defect gap states as a result of light absorption processes explains the enhanced performance of laser-irradiated NiOx. Additionally, laser irradiation results in complex thermal and photo thermal changes, thus resulting in an enhanced electrical performance of the p-type NiOx/SiO2 TFT structure. View Full-Text
Keywords: laser irradiation; p-type NiO; SiO2 layer; thin film transistor laser irradiation; p-type NiO; SiO2 layer; thin film transistor
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MDPI and ACS Style

Manojreddy, P.; Itapu, S.; Ravali, J.K.; Sakkarai, S. Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation. Condens. Matter 2021, 6, 21. https://doi.org/10.3390/condmat6020021

AMA Style

Manojreddy P, Itapu S, Ravali JK, Sakkarai S. Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation. Condensed Matter. 2021; 6(2):21. https://doi.org/10.3390/condmat6020021

Chicago/Turabian Style

Manojreddy, Poreddy, Srikanth Itapu, Jammalamadaka Krishna Ravali, and Selvendran Sakkarai. 2021. "Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation" Condensed Matter 6, no. 2: 21. https://doi.org/10.3390/condmat6020021

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