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Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface

Department of Physics and Nanotechnology, Kursk State University, Radishcheva str. 33, Kursk 305000, Russia
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Condens. Matter 2019, 4(2), 56; https://doi.org/10.3390/condmat4020056
Received: 15 April 2019 / Revised: 13 June 2019 / Accepted: 18 June 2019 / Published: 19 June 2019
The article presents the results of an experimental study of the transport of charge carriers through semiconductor PANI-polystyrene/ ferroelectric PVDF-TrFE interface. Current-voltage characteristics of the structure under study have a typical form for memristors and may be explained by the movement of charge carriers in the internal switchable field of the crystal ferroelectric microregions located within a bulk volume of amorphous PVDF-TrFE matrix. This assumption is subject to XRD phase analysis, FTIR spectroscopy, and X-ray EDS microanalysis. A long-term (about 100 h) relaxation is detected for the resistance of the PANI-polysturene/PVDF-TrFE interface after the current-voltage characteristics measurement cycle that is associated with the processes of capture and release traps of charge carriers. View Full-Text
Keywords: PANI; PVDF-TrFE; polymer interface; ferroelectrics; memristor; long-term resistance relaxation PANI; PVDF-TrFE; polymer interface; ferroelectrics; memristor; long-term resistance relaxation
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Budaev, A.V.; Belenkov, R.N.; Emelianov, N.A. Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface. Condens. Matter 2019, 4, 56.

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