Next Article in Journal
Mechanism of High-Temperature Superconductivity in Correlated-Electron Systems
Previous Article in Journal
SAXS Analysis of Magnetic Field Influence on Magnetic Nanoparticle Clusters
Open AccessArticle

Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface

Department of Physics and Nanotechnology, Kursk State University, Radishcheva str. 33, Kursk 305000, Russia
Author to whom correspondence should be addressed.
Condens. Matter 2019, 4(2), 56;
Received: 15 April 2019 / Revised: 13 June 2019 / Accepted: 18 June 2019 / Published: 19 June 2019
The article presents the results of an experimental study of the transport of charge carriers through semiconductor PANI-polystyrene/ ferroelectric PVDF-TrFE interface. Current-voltage characteristics of the structure under study have a typical form for memristors and may be explained by the movement of charge carriers in the internal switchable field of the crystal ferroelectric microregions located within a bulk volume of amorphous PVDF-TrFE matrix. This assumption is subject to XRD phase analysis, FTIR spectroscopy, and X-ray EDS microanalysis. A long-term (about 100 h) relaxation is detected for the resistance of the PANI-polysturene/PVDF-TrFE interface after the current-voltage characteristics measurement cycle that is associated with the processes of capture and release traps of charge carriers. View Full-Text
Keywords: PANI; PVDF-TrFE; polymer interface; ferroelectrics; memristor; long-term resistance relaxation PANI; PVDF-TrFE; polymer interface; ferroelectrics; memristor; long-term resistance relaxation
Show Figures

Figure 1

MDPI and ACS Style

Budaev, A.V.; Belenkov, R.N.; Emelianov, N.A. Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface. Condens. Matter 2019, 4, 56.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop