Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer
Abstract
1. Introduction
2. Experiment
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Inner SD | Outer SD | All SD | Wavelength Yield | SD Yield | |
---|---|---|---|---|---|
Furnace A | 1.620 | 3.324 | 2.482 | 72.02% | 36.01% |
Furnace B | 1.569 | 2.815 | 2.152 | 91.47% | 41.47% |
Furnace C | 1.543 | 2.777 | 2.137 | 83.13% | 41.47% |
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Wang, H.; Xie, G.; Zhan, Y. Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer. Condens. Matter 2025, 10, 28. https://doi.org/10.3390/condmat10020028
Wang H, Xie G, Zhan Y. Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer. Condensed Matter. 2025; 10(2):28. https://doi.org/10.3390/condmat10020028
Chicago/Turabian StyleWang, Huanyou, Guangqi Xie, and Yingying Zhan. 2025. "Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer" Condensed Matter 10, no. 2: 28. https://doi.org/10.3390/condmat10020028
APA StyleWang, H., Xie, G., & Zhan, Y. (2025). Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer. Condensed Matter, 10(2), 28. https://doi.org/10.3390/condmat10020028