Mihok, F.; Hricková, G.; Puchý, V.; Szabó, J.; Ballóková, B.; Džunda, R.; Saksl, K.
Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor. Inorganics 2024, 12, 103.
https://doi.org/10.3390/inorganics12040103
AMA Style
Mihok F, Hricková G, Puchý V, Szabó J, Ballóková B, Džunda R, Saksl K.
Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor. Inorganics. 2024; 12(4):103.
https://doi.org/10.3390/inorganics12040103
Chicago/Turabian Style
Mihok, František, Gabriela Hricková, Viktor Puchý, Juraj Szabó, Beáta Ballóková, Róbert Džunda, and Karel Saksl.
2024. "Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor" Inorganics 12, no. 4: 103.
https://doi.org/10.3390/inorganics12040103
APA Style
Mihok, F., Hricková, G., Puchý, V., Szabó, J., Ballóková, B., Džunda, R., & Saksl, K.
(2024). Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor. Inorganics, 12(4), 103.
https://doi.org/10.3390/inorganics12040103
