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Open AccessArticle

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices

1
Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), Alexandria 21934, Egypt
2
National Institute of Laser Enhanced Science, Laser Interaction with Matter Department, Cairo University, Cairo 94142, Egypt
3
Department of physics, Faculty of science, Alexandria University, Alexandria 21543, Egypt
*
Author to whom correspondence should be addressed.
Photonics 2019, 6(2), 44; https://doi.org/10.3390/photonics6020044
Received: 19 March 2019 / Revised: 17 April 2019 / Accepted: 19 April 2019 / Published: 24 April 2019
(This article belongs to the Special Issue Advanced Optical Materials and Devices)
In this study, we investigated an innovative method for the fabrication of nanostructure bulk alloys and thin films of indium gallium nitride (InxGa1−xN) as active, thin films for light-emitting diode (LED) devices using both crystal growth and thermal vacuum evaporation techniques, respectively. These methods resulted in some tangible improvements upon the usual techniques of InxGa1−xN systems. A cheap glass substrate was used for the fabrication of the LED devices instead of sapphire. Indium (In) and Gallium (Ga) metals, and ammonia (NH3) were the precursors for the alloy formation. The alloys were prepared at different growth temperatures with compositions ranging from 0.1 ≤ x ≤ 0.9. InxGa1−xN alloys at 0.1 ≤ x ≤ 0.9 had different crystallinities with respect to X-Ray diffraction (XRD) patterns where the energy bandgap that was measured by photoluminescence (PL) fell in the range between 1.3 and 2.5 eV. The bulk alloys were utilized to deposit the thin films onto the glass substrate using thermal vacuum evaporation (TVE). The XRD thin films that were prepared by TVE showed high crystallinity of cubic and hexagonal structures with high homogeneity. Using TVE, the InxGa1−xN phase separation of 0.1 ≤ x ≤ 0.9 was eliminated and highly detected by XRD and FESEM. Also, the Raman spectroscopy confirmed the structure that was detected by XRD. The FESEM showed a variance in the grain size of both alloys and thin films. The InxGa1−xN LED device with the structure of glass/GaN/n-In0.1Ga0.9N:n/In0.1Ga0.9N/p-In0.1Ga0.9N:Mg was checked by the light emitted by electroluminescence (EL). White light generation is a promising new direction for the fabrication of such devices based on InxGa1−xN LED devices with simple and low-cost techniques. View Full-Text
Keywords: LED; InxGa1−xN; nanostructures LED; InxGa1−xN; nanostructures
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MDPI and ACS Style

B. Kashyout, A. .-H.; Fathy, M.; Gad, S.; Badr, Y.; A. Bishara, A. Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices. Photonics 2019, 6, 44.

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