This paper mainly presents a set of new Sapphire Backside Roughing technology. Presently, the associated Sapphire Backside Roughing technology is still concentrated on chemical etching, as its yield rate and efficiency are often limited by lattice structures, and the derived chemical waste fluid after etching is most likely to cause ecological contamination. In this research, refined abrasive jet processing technology is adopted, and in the meantime, the Taguchi experiment design method is taken for detailed experimental planning. Through processing parameter conditions and abrasive selection and development, proper surface roughing and processing uniformity are obtained so as to improve the various weak points of the abovementioned traditional etching effectively. It is discovered that abrasive blasting processing technology is, respectively, combined with wax-coated #1000 SiC particles and wax-coated #800 Zirconium particles to process the sapphire substrate with initial surface roughness 0.8–0.9 μmRa from the experiment. A 1.1–1.2 μmRa surface roughness effect can be achieved about two minutes later. The experimental results show that the actual degree of sapphire substrate surface roughing obtained in the AJM process depends on the gas pressure, impact angle, wax-coated abrasives, and additives. The new Sapphire Backside Roughing technology has high flexibility, which not only meets the requirements for sapphire surface roughing specification but can also effectively reduce the sapphire substrate roughing time and related cost.
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