Efficient Non-Destructive Detection of Interface Adhesion State by Interfacial Thermal Conductance: A Molecular Dynamics Study
Abstract
:1. Introduction
2. Model and Simulation Method
3. Results and Discussion
3.1. Interfacial Thermal Conductance of a Single Vacuole Model at 500 K
3.2. Interfacial Thermal Conductance of a Single Vacuole Model at 400 K
3.3. Interfacial Thermal Conductance of a Multiple Vacuole Model at 500 K
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Atom 1 | Atom 2 | σ(Å) | ϵ(eV) |
---|---|---|---|
C | C | 3.5000 | 0.00286 |
C | H | 2.9580 | 0.00193 |
Si | Si | 2.4799 | 0.00173 |
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Guo, J.; Ma, N.; Chen, J.; Wei, N. Efficient Non-Destructive Detection of Interface Adhesion State by Interfacial Thermal Conductance: A Molecular Dynamics Study. Processes 2023, 11, 1032. https://doi.org/10.3390/pr11041032
Guo J, Ma N, Chen J, Wei N. Efficient Non-Destructive Detection of Interface Adhesion State by Interfacial Thermal Conductance: A Molecular Dynamics Study. Processes. 2023; 11(4):1032. https://doi.org/10.3390/pr11041032
Chicago/Turabian StyleGuo, Jianhua, Niping Ma, Jiale Chen, and Ning Wei. 2023. "Efficient Non-Destructive Detection of Interface Adhesion State by Interfacial Thermal Conductance: A Molecular Dynamics Study" Processes 11, no. 4: 1032. https://doi.org/10.3390/pr11041032