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Journal: Electronics, 2020
Volume: 9
Number: 927

Article: Characterization of Single Event Cell Upsets in a Radiation Hardened SRAM in a 40 nm Bulk CMOS Technology
Authors: by Guoqing Yang, Junting Yu, Jincheng Zhang, Xiangyuan Liu and Qiang Chen
Link: https://www.mdpi.com/2079-9292/9/6/927

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