Esqueda, I.S.; Cress, C.D.; Anderson, T.J.; Ahlbin, J.R.; Bajura, M.; Fritze, M.; Moon, J.-S.
Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs). Electronics 2013, 2, 234-245.
https://doi.org/10.3390/electronics2030234
AMA Style
Esqueda IS, Cress CD, Anderson TJ, Ahlbin JR, Bajura M, Fritze M, Moon J-S.
Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs). Electronics. 2013; 2(3):234-245.
https://doi.org/10.3390/electronics2030234
Chicago/Turabian Style
Esqueda, Ivan S., Cory D. Cress, Travis J. Anderson, Jonathan R. Ahlbin, Michael Bajura, Michael Fritze, and Jeong-S. Moon.
2013. "Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)" Electronics 2, no. 3: 234-245.
https://doi.org/10.3390/electronics2030234
APA Style
Esqueda, I. S., Cress, C. D., Anderson, T. J., Ahlbin, J. R., Bajura, M., Fritze, M., & Moon, J.-S.
(2013). Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs). Electronics, 2(3), 234-245.
https://doi.org/10.3390/electronics2030234
