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Journal: Electronics, 2025
Volume: 14
Number: 853
Article:
Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes
Authors:
by
Ling Sang, Xiping Niu, Zhanwei Shen, Yu Huang, Xuan Tang, Kaige Huang, Jinyi Xu, Yawei He, Feng He, Zheyang Li, Rui Jin, Shizhong Yue and Feng Zhang
Link:
https://www.mdpi.com/2079-9292/14/5/853
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