A Dual-Mode Competitive Risk Framework for Electronic Devices Using the Fréchet-Chen Model
Abstract
1. Introduction
- Their inability to accurately represent non-monotonic failure patterns like the bathtub hazard curve rate (BHCR).
- Restriction to single FaM often leads to biased behavioral representations of EDs.
- FCCR Assumptions:
- 1.
- The FaMs are mutually exclusive. Therefore, if a failure event is captured, the others are discarded.
- 2.
- The FaMs are independent of each other, meaning the occurrence of one does not affect the probability of others. For this reason, the model does not consider the correlation between failures.
- 3.
- Each FaM follows its probability distribution related to the FrD or ChD.
- FCRR limitations:
- 1.
- The devices under analysis exhibit two primary FaMs, which are the most prevalent throughout their useful life.
- 2.
- Data considered censored exceed the maximum test time, so it is assumed that censoring is unrelated to any specific FaM.
- Introduce an alternative model capable of characterizing non-monotonic behavior, considering the specific cause of the failure rate through non-classical reliability distributions.
- To enhance FCCR application to reliability engineers, various properties related to the characterization of ED lifetimes and maintenance are introduced and analyzed.
- Two methods for estimating FCCR parameters are presented and analyzed. The first method is based on the MLE. The second method uses the Bayesian Framework via the HMC.
- A comparative study is conducted to evaluate the FCCR methodology against other models that share similar characteristics, using ED data featuring dual failure behaviors and monotone/no-monotone or both monotone failure modes.
- Analyze the influence of the proposed model parameters on device lifetimes, to facilitate their application in reliability studies.
2. Preliminary Notation and FCCR Model Description
2.1. Preliminary Notation
2.2. FCCR Model
3. Mathematical Properties of the FCCR for Reliability Analysis
3.1. Moments
3.2. Mean Residual Lifetime (MRL)
3.3. Risk Analysis
4. Methods for Estimating FCCR Parameters
4.1. Definition of the Likelihood Function
4.2. MLE for FCCR
4.3. BEM for FCCR
Algorithm 1 Application of HMC to the joint posterior inference in the FCCR model |
|
5. Case of Study
- I.
- The parameters for each CR model within the MLE were estimated using RStudio v2025.05.0, employing the MaxLik [47] package and the Newton-Raphson optimization method.
- II.
- The BEM for FCCR was implemented in the RStan [48] Package in Rstudio. Three parallel chains were set up with 5000 subsequent samples (1000 burn-in), employing the NUTS algorithm that dynamically adjusts leapfrog steps. Gamma parameters were initialized with values previously obtained using MLE. The sampling process was executed using three processing cores to accelerate the calculations.
- III.
- For each case study, we assess model performance using the Akaike Information Criterion (AIC) and Bayesian Information Criterion (BIC), which balance goodness-of-fit against model complexity. To further validate the results, we conduct rigorous tests—specifically the Kolmogorov-Smirnov (KS), Anderson-Darling (AD), and Cramér-von Mises (CVM) tests—and report their corresponding p-values. Together, these metrics offer a robust framework for model selection, ensuring empirical accuracy, parsimony, and statistical coherence.
- IV.
- The Kaplan-Meier method has been used for the non-parametric representation of the EDS’s behavior in each case study, which is built as an accumulated product of conditional probabilities to survive at each time an event occurs.
- V.
- Table 2 presents the HRFs of the CR models used for comparison with the FCCR to demonstrate the proposed model’s efficiency. The selection of CR models for comparison was mainly based on those incorporating the FrD or ChD or variants derived from these base models.
- VI.
- Finally, the calculation of the parameters between the CR models defined in the Table 2 and the FCCR was done through the MLE to carry out the comparative study.
5.1. Case of Study I: Analysis of the Behavior of Electrode Failures
- Failure due to degradation (Mode D): The failures exhibited by electrodes under this classification were due to the degradation of internal components, i.e., wear and tear of the device itself. This type of failure usually appears in the later stages of the device’s lifespan.
- Failure due to an early problem (Mode E): In this case, the electrodes had defects in the insulation material, which is attributed to the device’s manufacturing process. These types of failures usually arise during the initial phase of the device’s lifespan.
5.1.1. Estimation of the FCCR Model Parameters Using the MLE and BEM Approaches
5.1.2. Comparative Analysis of the FCCR Against Other CR Models
5.2. Case of Study II: Lifetimes and Downtimes of 30 Electronic Units (EUs)
- Mode S: This FaM resulted from the gradual accumulation of random damage due to voltage spikes on the power line during electrical storms, which ultimately caused a specific unprotected electronic component to fail. Such failures predominantly occurred during the early stages of the device’s operational life.
- Mode W: This FaM, resulting from typical wear and aging of the product, began to manifest after 100,000 use cycles.
5.2.1. Estimation of the FCCR Model Parameters Using the MLE and BEM Approaches
5.2.2. Comparative Analysis of the FCCR Against Other CR Models
6. Physical Interpretation of FCCR Model Parameters in Reliability Analysis
- (burn-in shape): represents the infant mortality stage, which will be found on the left side of the BHCR. Its estimated value will indicate how pronounced the exponential drop in this stage of the ED will be. in design environments, regulates the ED warranty times.
- (burn-in scale): gives practitioners the rate at which the device reaches normal use life, i.e., how quickly the ED matures and survives the effects of manufacturing and/or design processes.
- (fatigue shape): controls the wear stage in the ED. This means it establishes the probability that the device’s internal components will fail to maintain optimal functioning before a catastrophic failure occurs. In the case of the BCHR representation, is in the exponentially growing stage of said representation.
- (fatigue scale): within the FCCR modulates how internal components lose physical and design properties to maintain full ED operation. This parameter is located in the exponentially increasing part of the BHCR.
- The correlations, except and , are represented in the flat part of the graph (BHCR), which indicates the possible failures that may occur in the device as a consequence of the interactions that the internal components of the ED have.
7. Conclusions and Future Work
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
Appendix A. Proofs of FCCR Properties
Appendix A.1. Moments
Appendix A.2. MRL
Appendix A.3. Risk Analysis of FCCR
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Parameter | Risk of Failure | ||||
---|---|---|---|---|---|
1 | |||||
1 | 1 | ||||
Model | |
---|---|
Fréchet-Weibull Distribution (FWD) [35] | |
Flexible additive Chen-Gompertz (FACG) [31] | |
Additive Chen-Perks Distribution (ACP) [37] | |
Chen-Weibull Distribution (CWD) [39] | |
Additive Weibull Distribution (AWD) [19] | |
Additive modified Weibull (AMW) [22] |
Metrics | Parameters | ||||
---|---|---|---|---|---|
MLE | Parameter Value (StDev) | ||||
BEM | Parameter Value (StDev) | ||||
HDI | |||||
Model | P.E (SD) | Statistics | |||||
---|---|---|---|---|---|---|---|
FCCR | |||||||
ACP | |||||||
AWD | |||||||
AMW | |||||||
CWD | |||||||
FACG | |||||||
FWD |
Mode | Empirical Estimate | FCCR MLE | FCCR BEM | ACP | AWD | AMW | CWD | FACG | FWD |
---|---|---|---|---|---|---|---|---|---|
Metrics | Parameters | ||||
---|---|---|---|---|---|
MLE | Parameter Value (StDev) | ||||
BEM | Parameter Value (StDev) | ||||
HDI | |||||
Model | P.E (SD) | Statistics | |||||
---|---|---|---|---|---|---|---|
FCCR | |||||||
ACP | |||||||
AWD | |||||||
AMW | |||||||
CWD | |||||||
FACG | |||||||
FWD |
Mode | Empirical Estimate | FCCR MLE | FCCR BEM | ACP | AWD | AMW | CWD | FACG | FWD |
---|---|---|---|---|---|---|---|---|---|
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Méndez-González, L.C.; Rodríguez-Picón, L.A.; González-Hernández, I.J.; Pérez-Olguín, I.J.C.; Quezada-Carreón, A.E. A Dual-Mode Competitive Risk Framework for Electronic Devices Using the Fréchet-Chen Model. Electronics 2025, 14, 3276. https://doi.org/10.3390/electronics14163276
Méndez-González LC, Rodríguez-Picón LA, González-Hernández IJ, Pérez-Olguín IJC, Quezada-Carreón AE. A Dual-Mode Competitive Risk Framework for Electronic Devices Using the Fréchet-Chen Model. Electronics. 2025; 14(16):3276. https://doi.org/10.3390/electronics14163276
Chicago/Turabian StyleMéndez-González, Luis Carlos, Luis Alberto Rodríguez-Picón, Isidro Jesús González-Hernández, Iván Juan Carlos Pérez-Olguín, and Abel Eduardo Quezada-Carreón. 2025. "A Dual-Mode Competitive Risk Framework for Electronic Devices Using the Fréchet-Chen Model" Electronics 14, no. 16: 3276. https://doi.org/10.3390/electronics14163276
APA StyleMéndez-González, L. C., Rodríguez-Picón, L. A., González-Hernández, I. J., Pérez-Olguín, I. J. C., & Quezada-Carreón, A. E. (2025). A Dual-Mode Competitive Risk Framework for Electronic Devices Using the Fréchet-Chen Model. Electronics, 14(16), 3276. https://doi.org/10.3390/electronics14163276