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Peer-Review Record

An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

Electronics 2024, 13(4), 707; https://doi.org/10.3390/electronics13040707
by Abdulhadi Alahmadi 1 and Tae Sun Chung 2,*
Reviewer 1: Anonymous
Reviewer 2:
Reviewer 3:
Electronics 2024, 13(4), 707; https://doi.org/10.3390/electronics13040707
Submission received: 24 November 2023 / Revised: 29 January 2024 / Accepted: 5 February 2024 / Published: 9 February 2024
(This article belongs to the Section Networks)

Round 1

Reviewer 1 Report

Comments and Suggestions for Authors

1.  How to calculate the recovery delay shown in Fig. 3? Which memory did the AHP and ANP method choose ? Which paramters are used in the calculation of the delay?

2. Which figure is mentioned in Line 342 ?

Author Response

Respected Editor and Reviewers,

Thank you for your time and review of our paper with positive comments. We have revised our paper in a step-by-step manner and addressed every comment made by the reviewers. Your valuable comments have improved our paper. These changes are highlighted in yellow in our revised manuscript.

Please see the attached response letter. Thanks

Best regards,

Professor Tae-Sun Chung

Full Professor, Department of Computer Engineering, Ajou University, Suwon, South Korea)

Google Scholar:

https://scholar.google.com.pk/citations?user=yZlN95oAAAAJ&hl=en

Author Response File: Author Response.pdf

Reviewer 2 Report

Comments and Suggestions for Authors

This paper investigates how ANP help to select technology from other memory technologies including NAND, 3D XPoint et al, to be in conjunction with TCAM. Because this paper mentions some popular memory types, hence it would cause interest of readers how TCAM would cooperate with those tehcnologies. But this is a simulation paper, it is also very critical to convince people the effectiveness of the model you employed here.

1. Since you mentioned how ANP determined the rank of the memory types including NAND, MRAM, et al, how the ranking would be different for the examples you listed at the last, such as Abilene, RedIris and DFN?

2. Please clarify the scenarios where you prefer to use weighted supermatrix,  vs. Limit supermatrix.

Author Response

Respected Editor and Reviewers,

Thank you for your time and review of our paper with positive comments. We have revised our paper in a step-by-step manner and addressed every comment made by the reviewers. Your valuable comments have improved our paper. These changes are highlighted in a yellow color in our revised manuscript.

Please see the attached response letter.

Best regards,

Professor Tae-Sun Chung

Full Professor, Department of Computer Engineering, Ajou University, Suwon, South Korea)

Google Scholar:

https://scholar.google.com.pk/citations?user=yZlN95oAAAAJ&hl=en

Author Response File: Author Response.pdf

Reviewer 3 Report

Comments and Suggestions for Authors

The authors provided a scheme to enhance TCAM capacity with other memory technologies and a mathematical decision-making model. Then, the effectiveness are further validated by using two kinds of switches. The novelty should be enhanced which looks like a research report not an academic paper. Specifically, there are some problems that need to be addressed as follow:

 

1 The key parameters of each memory technology should be provided as well as the main weakness. Table 1 and Table 2 should add more detailed information.

 

2 The author mentions different criteria for suitable memory technology and then applies them to the ANP method in Figure 2, but where do the specific calculation parameters of these criteria come from? Are there any specific schemes to quantify these criteria? In Table 3, the importance of memory feature is too rough without scientific assessment.

 

3 Provide specific results of combining with TCAM based these alternative memory with detailed information. Also, the English should further improved.

 

Comments on the Quality of English Language

Shoulde be further improved.

Author Response

Respected Editor and Reviewers,

Thank you for your time and review of our paper with positive comments. We have revised our paper in a step-by-step manner and addressed every comment made by the reviewers. Your valuable comments have improved our paper. These changes are highlighted in a yellow color in our revised manuscript.

Please see the attached response letter.

Best regards,

Professor Tae-Sun Chung

Full Professor, Department of Computer Engineering, Ajou University, Suwon, South Korea)

Google Scholar:

https://scholar.google.com.pk/citations?user=yZlN95oAAAAJ&hl=en

Author Response File: Author Response.pdf

Round 2

Reviewer 1 Report

Comments and Suggestions for Authors

This paper developed a scheme for enhancing the capacity of TCAM with state-430 of-the-art memory technologies. I am satisfied with the revised manuscript.

Comments on the Quality of English Language

Some statement could be improved furthor.

Reviewer 3 Report

Comments and Suggestions for Authors

The authors have addressed all the questions.

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