Zhang, H.; Huang, T.; Cao, R.; Wang, C.; Peng, B.; Wu, J.; Wang, S.; Zheng, K.; Jia, R.; Zhang, Y.;
et al. Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application. Electronics 2024, 13, 4602.
https://doi.org/10.3390/electronics13234602
AMA Style
Zhang H, Huang T, Cao R, Wang C, Peng B, Wu J, Wang S, Zheng K, Jia R, Zhang Y,
et al. Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application. Electronics. 2024; 13(23):4602.
https://doi.org/10.3390/electronics13234602
Chicago/Turabian Style
Zhang, Hongpeng, Tianli Huang, Rongjun Cao, Chen Wang, Bo Peng, Jibao Wu, Shaochong Wang, Kunwei Zheng, Renxu Jia, Yuming Zhang,
and et al. 2024. "Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application" Electronics 13, no. 23: 4602.
https://doi.org/10.3390/electronics13234602
APA Style
Zhang, H., Huang, T., Cao, R., Wang, C., Peng, B., Wu, J., Wang, S., Zheng, K., Jia, R., Zhang, Y., & Zhang, H.
(2024). Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application. Electronics, 13(23), 4602.
https://doi.org/10.3390/electronics13234602
