Order Article Reprints

Joo HJ, Yoon SS, Oh SY, Lim Y, Lee GH, Yoo G. Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO₂ Interlayer for Improved Endurance and Leakage Current. Electronics. 2024; 13(22):4515. https://doi.org/10.3390/electronics13224515

Joo, Hyeong Jun, Si Sung Yoon, Seung Yoon Oh, Yoojin Lim, Gyu Hyung Lee, and Geonwook Yoo. 2024. "Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO₂ Interlayer for Improved Endurance and Leakage Current" Electronics 13, no. 22: 4515. https://doi.org/10.3390/electronics13224515

Joo, H. J., Yoon, S. S., Oh, S. Y., Lim, Y., Lee, G. H., & Yoo, G. (2024). Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO₂ Interlayer for Improved Endurance and Leakage Current. Electronics, 13(22), 4515. https://doi.org/10.3390/electronics13224515