Yang, S.; Guo, N.; Zhao, S.; Li, Y.; Wei, M.; Zhang, Y.; Liu, X.
Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity. Electronics 2024, 13, 2109.
https://doi.org/10.3390/electronics13112109
AMA Style
Yang S, Guo N, Zhao S, Li Y, Wei M, Zhang Y, Liu X.
Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity. Electronics. 2024; 13(11):2109.
https://doi.org/10.3390/electronics13112109
Chicago/Turabian Style
Yang, Shangyu, Ning Guo, Siqi Zhao, Yunkai Li, Moyu Wei, Yang Zhang, and Xingfang Liu.
2024. "Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity" Electronics 13, no. 11: 2109.
https://doi.org/10.3390/electronics13112109
APA Style
Yang, S., Guo, N., Zhao, S., Li, Y., Wei, M., Zhang, Y., & Liu, X.
(2024). Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity. Electronics, 13(11), 2109.
https://doi.org/10.3390/electronics13112109