Yuan, X.; Liu, Z.; Qi, J.; Xiao, J.; He, H.; Tang, W.; Lee, C.; Zhao, Y.
Impact of Pre-Annealed ZrO2 Interfacial Layer on the Ferroelectric Behavior of Hf0.5Zr0.5O2. Electronics 2024, 13, 3.
https://doi.org/10.3390/electronics13010003
AMA Style
Yuan X, Liu Z, Qi J, Xiao J, He H, Tang W, Lee C, Zhao Y.
Impact of Pre-Annealed ZrO2 Interfacial Layer on the Ferroelectric Behavior of Hf0.5Zr0.5O2. Electronics. 2024; 13(1):3.
https://doi.org/10.3390/electronics13010003
Chicago/Turabian Style
Yuan, Xiaobo, Zongfang Liu, Jiabin Qi, Jinpan Xiao, Huikai He, Wentao Tang, Choonghyun Lee, and Yi Zhao.
2024. "Impact of Pre-Annealed ZrO2 Interfacial Layer on the Ferroelectric Behavior of Hf0.5Zr0.5O2" Electronics 13, no. 1: 3.
https://doi.org/10.3390/electronics13010003
APA Style
Yuan, X., Liu, Z., Qi, J., Xiao, J., He, H., Tang, W., Lee, C., & Zhao, Y.
(2024). Impact of Pre-Annealed ZrO2 Interfacial Layer on the Ferroelectric Behavior of Hf0.5Zr0.5O2. Electronics, 13(1), 3.
https://doi.org/10.3390/electronics13010003