Order Article Reprints

Kim H-J, Kim D-W, Lee W-Y, Lee S-H, Bae J-H, Kang I-M, Jang J. Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO₂ Thin-Film Transistors. Electronics. 2021; 10(14):1629. https://doi.org/10.3390/electronics10141629

Kim, Hyeon-Joong, Do-Won Kim, Won-Yong Lee, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, and Jaewon Jang. 2021. "Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO₂ Thin-Film Transistors" Electronics 10, no. 14: 1629. https://doi.org/10.3390/electronics10141629

Kim, H.-J., Kim, D.-W., Lee, W.-Y., Lee, S.-H., Bae, J.-H., Kang, I.-M., & Jang, J. (2021). Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO₂ Thin-Film Transistors. Electronics, 10(14), 1629. https://doi.org/10.3390/electronics10141629