Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation
Research Computing Center, M. V. Lomonosov Moscow State University, 119991 Moscow, Russia
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Coatings 2019, 9(9), 568; https://doi.org/10.3390/coatings9090568
Received: 5 August 2019 / Revised: 27 August 2019 / Accepted: 2 September 2019 / Published: 5 September 2019
(This article belongs to the Special Issue Design, Manufacturing and Measurement of Optical Film Coatings)
The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 ÷ 1.4 g/cm3. This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.
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MDPI and ACS Style
Grigoriev, F.; Sulimov, V.; Tikhonravov, A. Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation. Coatings 2019, 9, 568.
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