Next Article in Journal
Surface Characterization and Copper Release of a-C:H:Cu Coatings for Medical Applications
Next Article in Special Issue
Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides
Previous Article in Journal
Review of Micro–Nanoscale Surface Coatings Application for Sustaining Dropwise Condensation
Previous Article in Special Issue
The Use of Copper Oxide Thin Films in Gas-Sensing Applications
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Coatings 2019, 9(2), 118; https://doi.org/10.3390/coatings9020118

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

1
Department of Material Science and Engineering, École polytechnique fédérale de Lausanne (EPFL), 1010 Lausanne, Switzerland
2
Department of Materials Engineering, National Pingtung University of Science &Technology, Pingtung 91201, Taiwan
3
ZEUS International Management Consultant Company, Kaohsiung 80147, Taiwan
*
Author to whom correspondence should be addressed.
Received: 23 January 2019 / Revised: 8 February 2019 / Accepted: 11 February 2019 / Published: 13 February 2019
(This article belongs to the Special Issue Thin Films for Electronic Applications)
Full-Text   |   PDF [3812 KB, uploaded 19 February 2019]   |  
  |   Review Reports

Abstract

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which was achieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition of dysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films were investigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films were characterized using field emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when the annealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C, the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phases were observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showed no MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy films with 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ~2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C. View Full-Text
Keywords: CuMn alloy; dysprosium; thin film resistors; resistivity; TCR CuMn alloy; dysprosium; thin film resistors; resistivity; TCR
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Lee, H.-Y.; He, C.-W.; Lee, Y.-C.; Wu, D.-C. A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films. Coatings 2019, 9, 118.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Coatings EISSN 2079-6412 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top