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Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine

College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Department of Chemistry, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
Author to whom correspondence should be addressed.
Coatings 2018, 8(8), 281;
Received: 1 July 2018 / Revised: 7 August 2018 / Accepted: 11 August 2018 / Published: 14 August 2018
PDF [18483 KB, uploaded 14 August 2018]


Two-dimensional dichalcogenides (TMDs) and mxene junctions had been predicted to possess distinct tunable electronic properties. However, direct synthesis of WS2 on Ti3C2Tx mxene is still challenging. Herein, we successfully deposited WS2 onto the surface of Ti3C2Tx mxene by employing the vapor transportation (VT) routine. By modulating pressure and source-sample distance, multilayer and monolayer (1 L) WS2 flakes were deposited onto the lateral side and top surface of Ti3C2Tx flakes. The 1 L WS2 flakes growing on lateral side of Ti3C2Tx flake have much higher photoluminescence (PL) intensity than 1 L flakes growing on the top surface. Our study has the potential to benefit the design and preparation of novel electronic and electrochemical devices based on TMDs/mxene junctions. View Full-Text
Keywords: vapor transportation; 1 L WS2; Ti3C2Tx mxene vapor transportation; 1 L WS2; Ti3C2Tx mxene

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Su, W.; Wang, S.; Fu, L.; Chen, F.; Song, K.; Huang, X.; Yang, L. Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine. Coatings 2018, 8, 281.

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