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Coatings 2018, 8(8), 281; https://doi.org/10.3390/coatings8080281

Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine

1
College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
2
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
3
Department of Chemistry, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
*
Author to whom correspondence should be addressed.
Received: 1 July 2018 / Revised: 7 August 2018 / Accepted: 11 August 2018 / Published: 14 August 2018
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Abstract

Two-dimensional dichalcogenides (TMDs) and mxene junctions had been predicted to possess distinct tunable electronic properties. However, direct synthesis of WS2 on Ti3C2Tx mxene is still challenging. Herein, we successfully deposited WS2 onto the surface of Ti3C2Tx mxene by employing the vapor transportation (VT) routine. By modulating pressure and source-sample distance, multilayer and monolayer (1 L) WS2 flakes were deposited onto the lateral side and top surface of Ti3C2Tx flakes. The 1 L WS2 flakes growing on lateral side of Ti3C2Tx flake have much higher photoluminescence (PL) intensity than 1 L flakes growing on the top surface. Our study has the potential to benefit the design and preparation of novel electronic and electrochemical devices based on TMDs/mxene junctions. View Full-Text
Keywords: vapor transportation; 1 L WS2; Ti3C2Tx mxene vapor transportation; 1 L WS2; Ti3C2Tx mxene
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Su, W.; Wang, S.; Fu, L.; Chen, F.; Song, K.; Huang, X.; Yang, L. Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine. Coatings 2018, 8, 281.

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