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Open AccessArticle

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
Authors to whom correspondence should be addressed.
Coatings 2018, 8(6), 205;
Received: 20 April 2018 / Revised: 16 May 2018 / Accepted: 24 May 2018 / Published: 30 May 2018
Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL) emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2. View Full-Text
Keywords: chemical vapor transport deposition; tungsten disulfide; monolayer; photoluminescence chemical vapor transport deposition; tungsten disulfide; monolayer; photoluminescence
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MDPI and ACS Style

Lv, Y.; Huang, F.; Zhang, L.; Weng, J.; Zhao, S.; Ji, Z. Preparation and Photoluminescence of Tungsten Disulfide Monolayer. Coatings 2018, 8, 205.

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