Order Article Reprints

Tu R, Liu C, Xu Q, Liu K, Li Q, Zhang X, Kosinova ML, Goto T, Zhang S. Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition. Coatings. 2022; 12(3):329. https://doi.org/10.3390/coatings12030329

Tu, Rong, Chengyin Liu, Qingfang Xu, Kai Liu, Qizhong Li, Xian Zhang, Marina L. Kosinova, Takashi Goto, and Song Zhang. 2022. "Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition" Coatings 12, no. 3: 329. https://doi.org/10.3390/coatings12030329

Tu, R., Liu, C., Xu, Q., Liu, K., Li, Q., Zhang, X., Kosinova, M. L., Goto, T., & Zhang, S. (2022). Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition. Coatings, 12(3), 329. https://doi.org/10.3390/coatings12030329