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Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

RCC M.V. Lomonosov MSU, 119991 Moscow, Russian
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Coatings 2020, 10(3), 220; https://doi.org/10.3390/coatings10030220
Received: 24 January 2020 / Revised: 21 February 2020 / Accepted: 27 February 2020 / Published: 29 February 2020
(This article belongs to the Special Issue Thin Film Dynamics: Theory and Computer Simulations)
Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data. View Full-Text
Keywords: thin films; glancing angle deposition; molecular dynamics; silicon dioxide films; stresses thin films; glancing angle deposition; molecular dynamics; silicon dioxide films; stresses
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Grigoriev, F.V.; Sulimov, V.B.; Tikhonravov, A.V. Atomistic Simulation of Stresses in Growing Silicon Dioxide Films. Coatings 2020, 10, 220.

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