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Nanomaterials 2018, 8(9), 698; https://doi.org/10.3390/nano8090698

Strain-Induced Quantum Spin Hall Effect in Two-Dimensional Methyl-Functionalized Silicene SiCH3

School of Physics, University of Jinan, Jinan 250022, China
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Received: 2 August 2018 / Revised: 31 August 2018 / Accepted: 4 September 2018 / Published: 7 September 2018
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Abstract

Quantum Spin Hall (QSH) has potential applications in low energy consuming spintronic devices and has become a researching hotspot recently. It benefits from insulators feature edge states, topologically protected from backscattering by time-reversal symmetry. The properties of methyl functionalized silicene (SiCH3) have been investigated using first-principles calculations, which show QSH effect under reasonable strain. The origin of the topological characteristic of SiCH3, is mainly associated with the s-pxy orbitals band inversion at Γ point, whilst the band gap appears under the effect of spin-orbital coupling (SOC). The QSH phase of SiCH3 is confirmed by the topological invariant Z2 = 1, as well as helical edge states. The SiCH3 supported by hexagonal boron nitride (BN) film makes it possible to observe its non-trivial topological phase experimentally, due to the weak interlayer interaction. The results of this work provide a new potential candidate for two-dimensional honeycomb lattice spintronic devices in spintronics. View Full-Text
Keywords: quantum spin hall effect; spin-orbital coupling; silicene; SiCH3 quantum spin hall effect; spin-orbital coupling; silicene; SiCH3
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Ren, C.-C.; Ji, W.-X.; Zhang, S.-F.; Zhang, C.-W.; Li, P.; Wang, P.-J. Strain-Induced Quantum Spin Hall Effect in Two-Dimensional Methyl-Functionalized Silicene SiCH3. Nanomaterials 2018, 8, 698.

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