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Open AccessArticle

Nanoscale Ring-Shaped Conduction Channels with Memristive Behavior in BiFeO3 Nanodots

by Zhongwen Li 1,2,3, Zhen Fan 1,2,* and Guofu Zhou 2,4,5,6
1
Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
2
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
3
Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai’an 223003, China
4
National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China
5
Shenzhen Guohua Optoelectronics Tech. Co. Ltd., Shenzhen 518110, China
6
Academy of Shenzhen Guohua Optoelectronics, Shenzhen 518110, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(12), 1031; https://doi.org/10.3390/nano8121031
Received: 26 November 2018 / Revised: 8 December 2018 / Accepted: 10 December 2018 / Published: 11 December 2018
Nanoscale ring-shaped conduction channels with memristive behavior have been observed in the BiFeO3 (BFO) nanodots prepared by the ion beam etching. At the hillside of each individual nanodot, a ring-shaped conduction channel is formed. Furthermore, the conduction channels exhibit memristive behavior, i.e., their resistances can be continuously tuned by the applied voltages. More specifically, a positive (negative) applied voltage reduces (increases) the resistance, and the resistance continuously varies as the repetition number of voltage scan increases. It is proposed that the surface defects distributed at the hillsides of nanodots may lower the Schottky barriers at the Pt tip/BFO interfaces, thus leading to the formation of ring-shaped conduction channels. The surface defects are formed due to the etching and they may be temporarily stabilized by the topological domain structures of BFO nanodots. In addition, the electron trapping/detrapping at the surface defects may be responsible for the memristive behavior, which is supported by the surface potential measurements. These nanoscale ring-shaped conduction channels with memristive behavior may have potential applications in high-density, low-power memory devices. View Full-Text
Keywords: ring-shaped conduction channels; memristors; nanodots; BiFeO3 ring-shaped conduction channels; memristors; nanodots; BiFeO3
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MDPI and ACS Style

Li, Z.; Fan, Z.; Zhou, G. Nanoscale Ring-Shaped Conduction Channels with Memristive Behavior in BiFeO3 Nanodots. Nanomaterials 2018, 8, 1031.

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