Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO2 Magnetic Semiconductors
AbstractThe origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO2 powders, prepared by hard-templating, have been unraveled. Whereas, both oxygen vacancies and Fe-based impurity phases could be a plausible explanation for the observed room temperature ferromagnetism, the low temperature magnetism is mainly and unambiguously arising from the nanoscale nature of the formed antiferromagnetic CuO, which results in a net magnetization that is reminiscent of ferromagnetic behavior. This is ascribed to uncompensated spins and shape-mediated spin canting effects. The reduced blocking temperature, which resides between 30 and 5 K, and traces of vertical shifts in the hysteresis loops confirm size effects in CuO. The mesoporous nature of the system with a large surface-to-volume ratio likely promotes the occurrence of uncompensated spins, spin canting, and spin frustration, offering new prospects in the use of magnetic semiconductors for energy-efficient spintronics. View Full-Text
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Fan, J.; Menéndez, E.; Guerrero, M.; Quintana, A.; Weschke, E.; Pellicer, E.; Sort, J. Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO2 Magnetic Semiconductors. Nanomaterials 2017, 7, 348.
Fan J, Menéndez E, Guerrero M, Quintana A, Weschke E, Pellicer E, Sort J. Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO2 Magnetic Semiconductors. Nanomaterials. 2017; 7(11):348.Chicago/Turabian Style
Fan, Junpeng; Menéndez, Enric; Guerrero, Miguel; Quintana, Alberto; Weschke, Eugen; Pellicer, Eva; Sort, Jordi. 2017. "Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO2 Magnetic Semiconductors." Nanomaterials 7, no. 11: 348.
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