The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China

Author to whom correspondence should be addressed.

Academic Editor: Shinya Maenosono

Nanomaterials 2016, 6(12), 233; https://doi.org/10.3390/nano6120233

Received: 14 October 2016 / Revised: 12 November 2016 / Accepted: 25 November 2016 / Published: 3 December 2016

(This article belongs to the Special Issue Semiconductor Nanoparticles for Electric Device Applications)

View Full-Text Download PDF

Browse Figures

Citation Export

Abstract

Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 10³ S/cm and 4 × 10² S/cm is achieved for the P-doped and B-doped samples, respectively. View Full-Text

Keywords: carrier transport; doped; temperature-dependent Hall measurement

▼ Show Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Share and Cite

MDPI and ACS Style

Shan, D.; Qian, M.; Ji, Y.; Jiang, X.; Xu, J.; Chen, K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials 2016, 6, 233. https://doi.org/10.3390/nano6120233

AMA Style

Shan D, Qian M, Ji Y, Jiang X, Xu J, Chen K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials. 2016; 6(12):233. https://doi.org/10.3390/nano6120233

Chicago/Turabian Style

Shan, Dan, Mingqing Qian, Yang Ji, Xiaofan Jiang, Jun Xu, and Kunji Chen. 2016. "The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities" Nanomaterials 6, no. 12: 233. https://doi.org/10.3390/nano6120233

Find Other Styles

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Abstract views Pdf views Html views

Article Menu

The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Article Access Map by Country/Region

Further Information

Guidelines

MDPI Initiatives

Follow MDPI