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Article

The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

1
National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
2
School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China
*
Author to whom correspondence should be addressed.
Academic Editor: Shinya Maenosono
Nanomaterials 2016, 6(12), 233; https://doi.org/10.3390/nano6120233
Received: 14 October 2016 / Revised: 12 November 2016 / Accepted: 25 November 2016 / Published: 3 December 2016
(This article belongs to the Special Issue Semiconductor Nanoparticles for Electric Device Applications)
Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 103 S/cm and 4 × 102 S/cm is achieved for the P-doped and B-doped samples, respectively. View Full-Text
Keywords: carrier transport; doped; temperature-dependent Hall measurement carrier transport; doped; temperature-dependent Hall measurement
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MDPI and ACS Style

Shan, D.; Qian, M.; Ji, Y.; Jiang, X.; Xu, J.; Chen, K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials 2016, 6, 233. https://doi.org/10.3390/nano6120233

AMA Style

Shan D, Qian M, Ji Y, Jiang X, Xu J, Chen K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials. 2016; 6(12):233. https://doi.org/10.3390/nano6120233

Chicago/Turabian Style

Shan, Dan; Qian, Mingqing; Ji, Yang; Jiang, Xiaofan; Xu, Jun; Chen, Kunji. 2016. "The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities" Nanomaterials 6, no. 12: 233. https://doi.org/10.3390/nano6120233

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Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

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