Lai, Y.; Qiu, W.; Zeng, Z.; Cheng, S.; Yu, J.; Zheng, Q.
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory. Nanomaterials 2016, 6, 16.
https://doi.org/10.3390/nano6010016
AMA Style
Lai Y, Qiu W, Zeng Z, Cheng S, Yu J, Zheng Q.
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory. Nanomaterials. 2016; 6(1):16.
https://doi.org/10.3390/nano6010016
Chicago/Turabian Style
Lai, Yunfeng, Wenbiao Qiu, Zecun Zeng, Shuying Cheng, Jinling Yu, and Qiao Zheng.
2016. "Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory" Nanomaterials 6, no. 1: 16.
https://doi.org/10.3390/nano6010016
APA Style
Lai, Y., Qiu, W., Zeng, Z., Cheng, S., Yu, J., & Zheng, Q.
(2016). Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory. Nanomaterials, 6(1), 16.
https://doi.org/10.3390/nano6010016