Order Article Reprints

Na J-H, Park J-H, Park W, Feng J, Eun J-S, Lee J, Lee S-H, Jang J, Kang IM, Kim D-K, et al. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials. 2024; 14(5):466. https://doi.org/10.3390/nano14050466

Na, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, and et al. 2024. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors" Nanomaterials 14, no. 5: 466. https://doi.org/10.3390/nano14050466

Na, J.-H., Park, J.-H., Park, W., Feng, J., Eun, J.-S., Lee, J., Lee, S.-H., Jang, J., Kang, I. M., Kim, D.-K., & Bae, J.-H. (2024). Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials, 14(5), 466. https://doi.org/10.3390/nano14050466