Order Article Reprints

Zhou X, Yang J, Zhang H, Liu Y, Xie G, Liu W. A 1.6 kV Ga₂O₃ Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10⁻⁵ A/cm² Enabled by Field Plates and N Ion-Implantation Edge Termination. Nanomaterials. 2024; 14(11):978. https://doi.org/10.3390/nano14110978

Zhou, Xinlong, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, and Wenjun Liu. 2024. "A 1.6 kV Ga₂O₃ Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10⁻⁵ A/cm² Enabled by Field Plates and N Ion-Implantation Edge Termination" Nanomaterials 14, no. 11: 978. https://doi.org/10.3390/nano14110978

Zhou, X., Yang, J., Zhang, H., Liu, Y., Xie, G., & Liu, W. (2024). A 1.6 kV Ga₂O₃ Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10⁻⁵ A/cm² Enabled by Field Plates and N Ion-Implantation Edge Termination. Nanomaterials, 14(11), 978. https://doi.org/10.3390/nano14110978