Zhou, X.; Yang, J.; Zhang, H.; Liu, Y.; Xie, G.; Liu, W.
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination. Nanomaterials 2024, 14, 978.
https://doi.org/10.3390/nano14110978
AMA Style
Zhou X, Yang J, Zhang H, Liu Y, Xie G, Liu W.
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination. Nanomaterials. 2024; 14(11):978.
https://doi.org/10.3390/nano14110978
Chicago/Turabian Style
Zhou, Xinlong, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, and Wenjun Liu.
2024. "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination" Nanomaterials 14, no. 11: 978.
https://doi.org/10.3390/nano14110978
APA Style
Zhou, X., Yang, J., Zhang, H., Liu, Y., Xie, G., & Liu, W.
(2024). A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination. Nanomaterials, 14(11), 978.
https://doi.org/10.3390/nano14110978
