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Journal: Nanomaterials, 2024
Volume: 14
Number: 837
837
Article:
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology
Authors:
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Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong and Guilei Wangadd
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Cite
Radamson, H.H.; Miao, Y.; Zhou, Z.; Wu, Z.; Kong, Z.; Gao, J.; Yang, H.; Ren, Y.; Zhang, Y.; Shi, J.; et al. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. Nanomaterials 2024, 14, 837. https://doi.org/10.3390/nano14100837
Radamson HH, Miao Y, Zhou Z, Wu Z, Kong Z, Gao J, Yang H, Ren Y, Zhang Y, Shi J, et al. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. Nanomaterials. 2024; 14(10):837. https://doi.org/10.3390/nano14100837
Chicago/Turabian StyleRadamson, Henry H., Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, and et al. 2024. "CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology" Nanomaterials 14, no. 10: 837. https://doi.org/10.3390/nano14100837
APA StyleRadamson, H. H., Miao, Y., Zhou, Z., Wu, Z., Kong, Z., Gao, J., Yang, H., Ren, Y., Zhang, Y., Shi, J., Xiang, J., Cui, H., Lu, B., Li, J., Liu, J., Lin, H., Xu, H., Li, M., Cao, J., ... Wang, G. (2024). CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. Nanomaterials, 14(10), 837. https://doi.org/10.3390/nano14100837
