Wang, J.; Bi, J.; Xu, Y.; Niu, G.; Liu, M.; Stempitsky, V.
Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors. Nanomaterials 2023, 13, 638.
https://doi.org/10.3390/nano13040638
AMA Style
Wang J, Bi J, Xu Y, Niu G, Liu M, Stempitsky V.
Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors. Nanomaterials. 2023; 13(4):638.
https://doi.org/10.3390/nano13040638
Chicago/Turabian Style
Wang, Jianjian, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, and Viktor Stempitsky.
2023. "Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors" Nanomaterials 13, no. 4: 638.
https://doi.org/10.3390/nano13040638
APA Style
Wang, J., Bi, J., Xu, Y., Niu, G., Liu, M., & Stempitsky, V.
(2023). Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors. Nanomaterials, 13(4), 638.
https://doi.org/10.3390/nano13040638