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Journal: Nanomaterials, 2023
Volume: 13
Number: 2603

Article: SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
Authors: by Muhammad Ismail, Chandreswar Mahata, Myounggon Kang and Sungjun Kim
Link: https://www.mdpi.com/2079-4991/13/18/2603

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