Order Article Reprints

Chang T-Y, Wang K-C, Liu H-Y, Hseun J-H, Peng W-C, Ronchi N, Celano U, Banerjee K, Van Houdt J, Wu T-L. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO₂ Metal-Ferroelectric-Metal Memory. Nanomaterials. 2023; 13(14):2104. https://doi.org/10.3390/nano13142104

Chang, Ting-Yu, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, and Tian-Li Wu. 2023. "Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO₂ Metal-Ferroelectric-Metal Memory" Nanomaterials 13, no. 14: 2104. https://doi.org/10.3390/nano13142104

Chang, T.-Y., Wang, K.-C., Liu, H.-Y., Hseun, J.-H., Peng, W.-C., Ronchi, N., Celano, U., Banerjee, K., Van Houdt, J., & Wu, T.-L. (2023). Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO₂ Metal-Ferroelectric-Metal Memory. Nanomaterials, 13(14), 2104. https://doi.org/10.3390/nano13142104