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Journal: Nanomaterials, 2022
Volume: 12
Number: 643
643
Article: High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
Authors: by Ki-Sik Im, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An and Jae-Hoon Lee
Link: https://www.mdpi.com/2079-4991/12/4/643

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