Article Versions Notes

Im K-S, Mallem SPR, Choi J-S, Hwang Y-M, Roh J-S, An S-J, Lee J-H. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer. Nanomaterials. 2022; 12(4):643. https://doi.org/10.3390/nano12040643

Im, Ki-Sik, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An, and Jae-Hoon Lee. 2022. "High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer" Nanomaterials 12, no. 4: 643. https://doi.org/10.3390/nano12040643

Im, K.-S., Mallem, S. P. R., Choi, J.-S., Hwang, Y.-M., Roh, J.-S., An, S.-J., & Lee, J.-H. (2022). High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer. Nanomaterials, 12(4), 643. https://doi.org/10.3390/nano12040643